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Negative capacitance effect of Cu–TiC thin film deposited by DC magnetron plasma

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Abstract

The quest for low power consumption devices with new functionalities has made the negative capacitance (NC) effect, the most captivating and studied phenomenon. The NC effect is observed in Cu–TiC thin film at a low-frequency range between 112.9 Hz and 2 kHz. The Cu–TiC thin film was deposited on Si (100) substrate by DC magnetron co-sputtering process and then annealed in a vacuum at different temperatures (100–600°C). The magnitude of NC increased from −0.016 to −27.5 µF after annealing. The NC behaviour is also observed in the forward biased region of the capacitance–voltage (C–V) characteristics. The current–voltage (I–V) characteristics reveal the decreasing static and dynamic resistance for higher annealed films. An improved electrical conductivity (27.70 × 103 to 384.62 × 103 S m−1) is evidenced with decreasing ideality factor (2.01–0.55) in the post-annealed films. The films were found to be polycrystalline from X-ray diffraction patterns with Cu and TiC phases. Raman studies have also confirmed the presence of Cu and TiC vibrational modes in all films. The intensity of C peaks detected at 1359 cm−1 (D peak) and at 1590 cm−1 (G peak) in the as-deposited film decreased after annealing. The annealing effect reduced the amount of unreacted carbon and contributed to form stoichiometric TiC from non-stoichiometric TiC.

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Acknowledgements

We would like to thank Dr Sadhan Chandra Das and Dr Vasant Sathe, UGC-DAE CSR, Indore, India for their help in Raman experiments. We are also thankful to Professor Sukhen Das, Department of Physics, Jadavpur University, Kolkata, India, for providing the support of impedance analyser measurements.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, 711103, India

    Avishek Roy, Arun Kumar Mukhopadhyay & Abhijit Majumdar

  2. Department of Electronics, Vidyasagar College, Kolkata, 700006, India

    Avishek Roy

  3. Department of Physics, Dinabandhu Andrews College, Kolkata, 700084, India

    Arun Kumar Mukhopadhyay

  4. UGC-DAE Consortium for Scientific Research, Indore, 452017, India

    Mukul Gupta

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  1. Avishek Roy
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  2. Arun Kumar Mukhopadhyay
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  4. Abhijit Majumdar
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Correspondence to Avishek Roy.

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Roy, A., Mukhopadhyay, A.K., Gupta, M. et al. Negative capacitance effect of Cu–TiC thin film deposited by DC magnetron plasma. Bull Mater Sci 43, 260 (2020). https://doi.org/10.1007/s12034-020-02234-z

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  • DOI: https://doi.org/10.1007/s12034-020-02234-z

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