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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

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Abstract

In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length L CH decreases. Furthermore, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson-Schrödinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained.

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Authors and Affiliations

  1. Laboratoire Hyperfréquence et Semi-conducteur (L.H.S), Département d’Electronique, Faculté des Sciences de l’ingénieur, Université Mentouri de Constantine, 25000, Algérie, France

    D. Rechem & S. Latreche

  2. INL, bât. Blaise Pascal INSA 20, av. Jean Capelle, 69621, Villeurbanne Cedex, France

    C. Gontrand

Authors
  1. D. Rechem
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  2. S. Latreche
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  3. C. Gontrand
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Correspondence to D. Rechem.

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Rechem, D., Latreche, S. & Gontrand, C. Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors. Pramana - J Phys 72, 587–599 (2009). https://doi.org/10.1007/s12043-009-0052-5

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  • DOI: https://doi.org/10.1007/s12043-009-0052-5

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