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Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs

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Abstract

The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrier lowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model also incorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily / lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCAD simulations, with a relative error of around 3–7%.

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Acknowledgements

The authors would like to thank the Council of Scientific and Industrial Research and Department of Science and Technology, Govt. of India under SERC scheme for its financial assistance in carrying out research activities.

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Authors and Affiliations

  1. School of Technology, Electronics and Telecommunication Engineering, KIIT University, Bhubaneswar, 751 024, India

    Pradipta Dutta

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    Binit Syamal

  3. Nano Device Simulation Lab, Department of Electronics and Communication Engineering, Jadavpur University, Kolkata, 700 032, India

    Kalyan Koley, Arka Dutta & C K Sarkar

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  1. Pradipta Dutta
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  2. Binit Syamal
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Correspondence to Pradipta Dutta.

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Dutta, P., Syamal, B., Koley, K. et al. Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs. Pramana - J Phys 89, 33 (2017). https://doi.org/10.1007/s12043-017-1430-z

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  • DOI: https://doi.org/10.1007/s12043-017-1430-z

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