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Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

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Abstract

Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T –γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2 films.

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Authors and Affiliations

  1. State Key Laboratory of Coal Mine Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing, 400044, China

    Yiming Zhu & Congzhong Cai

  2. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China

    Yiming Zhu, Xinsheng Wang, Mei Zhang & Liming Xie

Authors
  1. Yiming Zhu
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  2. Xinsheng Wang
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  3. Mei Zhang
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  4. Congzhong Cai
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  5. Liming Xie
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Correspondence to Congzhong Cai or Liming Xie.

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Zhu, Y., Wang, X., Zhang, M. et al. Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride. Nano Res. 9, 2931–2937 (2016). https://doi.org/10.1007/s12274-016-1178-7

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