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Effect of SiO2 addition on the microstructure and electrical properties of ZnO-based varistors

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Abstract

The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0–1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase (Zn2SiO4) and a glass phase (Bi2SiO5) are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8–69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.

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Authors and Affiliations

  1. Research Center of Nano Science and Technology, Shanghai University, Shanghai, 200444, China

    Zhen-hong Wu, Jian-hui Fang & Li-yi Shi

  2. School of Science, Shanghai University, Shanghai, 200444, China

    Jian-hui Fang

  3. School of Material Science and Engineering, Shanghai University, Shanghai, 200072, China

    Dong Xu, Qin-dong Zhong & Li-yi Shi

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  1. Zhen-hong Wu
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  2. Jian-hui Fang
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  5. Li-yi Shi
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Correspondence to Zhen-hong Wu.

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Wu, Zh., Fang, Jh., Xu, D. et al. Effect of SiO2 addition on the microstructure and electrical properties of ZnO-based varistors. Int J Miner Metall Mater 17, 86–91 (2010). https://doi.org/10.1007/s12613-010-0115-0

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  • DOI: https://doi.org/10.1007/s12613-010-0115-0

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