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Synthesis of Cubic Nanocrystalline Silicon Carbide (3C-SiC) Films by HW-CVD Method

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Abstract

Cubic nanocrystalline silicon carbide (3C-SiC) films have been deposited by using the hot wire chemical vapor deposition (HW-CVD) method at a low substrate temperature and at high deposition rate. Structural, optical and electrical properties of these films have been investigated as a function of H2 dilution ratio. The formation of 3C-SiC films has been confirmed from low angle XRD analysis, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and dark and photoconductivity measurements. The FTIR spectroscopy analysis revealed that the bond densities of Si-H and C-H decrease while that of Si-C increases with increase in the H2 dilution ratio. The total hydrogen content decreases with increase in H2 dilution ratio and was found < 15 at. % over the entire range of H2 dilution ratio studied whereas the band gap show an increasing trend with increase in the H2 dilution ratio.

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Authors and Affiliations

  1. School of Energy Studies, Savitribai Phule Pune University, Pune, 411 007, India

    Mahesh Kamble, Vaishali Waman, Azam Mayabadi & Adinath Funde

  2. Modern College of Arts, Science and Commerce, Shivajinagar, Pune, 411 005, India

    Vaishali Waman

  3. UGC-DAE-CSR, University Campus, Khandawa Road, Indore, 452 017, India

    Vasant Sathe & T. Shripathi

  4. Department of Physics, Savitribai Phule Pune University, Pune, 411 007, India

    Habib Pathan & Sandesh Jadkar

Authors
  1. Mahesh Kamble
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  2. Vaishali Waman
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  3. Azam Mayabadi
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  4. Adinath Funde
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  5. Vasant Sathe
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  6. T. Shripathi
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  7. Habib Pathan
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  8. Sandesh Jadkar
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Corresponding author

Correspondence to Sandesh Jadkar.

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Kamble, M., Waman, V., Mayabadi, A. et al. Synthesis of Cubic Nanocrystalline Silicon Carbide (3C-SiC) Films by HW-CVD Method. Silicon 9, 421–429 (2017). https://doi.org/10.1007/s12633-015-9358-8

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  • DOI: https://doi.org/10.1007/s12633-015-9358-8

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