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Surface Potential Modeling and Simulation Analysis of Dopingless TFET Biosensor

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Abstract

The present paper has proposed a dielectric modulated gate underlap dopingless tunnel field effect transistor (DM-GUD-TFET). In the proposed device, a cavity is introduced on side of the gate metal to attain high sensitivity for biomedical applications. The immobilization of biomolecules within the cavity induces the variation in surface potential. The present work has analyzed different parameters affecting the electrical characteristics of the device which include a change in spacer length, variation in applied voltages (Vds and Vgs), and channel material. The modeling output characteristics have been compared with simulated outcomes for validating results. The potential model is obtained by categorizing the structure into ten sections counting source-drain depleted sections. The surface potential of each section is resolved using 1-dimennsional and 2-dimensional Poisson’s eq. (P.Eq.), respectively. The different values of dielectric constant and charge density are used for recreating the biomolecules for simulation in Silvaco ATLAS tool.

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Authors and Affiliations

  1. Nanoelectronic Research Lab, Department of Electronics and Communication Engineering, NIT Jalandhar, Jalandhar, Punjab, 144011, India

    Girish Wadhwa

  2. Department of ECE, National Institute of Technical Teachers Training & Research, Chandigarh, India

    Balwinder Raj

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  1. Girish Wadhwa
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  2. Balwinder Raj
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All authors contributed to the design and simulation. Material preparation, data collection and analysis were performed by Girish Wadhwa and Balwinder Raj. The first draft of the manuscript was written by Girish Wadhwa and other author commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Girish Wadhwa.

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Wadhwa, G., Raj, B. Surface Potential Modeling and Simulation Analysis of Dopingless TFET Biosensor. Silicon 14, 2147–2156 (2022). https://doi.org/10.1007/s12633-021-01011-9

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