Skip to main content
SpringerLink
Log in

Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors

  • Original paper
  • Published:
Indian Journal of Physics Aims and scope Submit manuscript

Abstract

N-channel depletion MOSFETs were irradiated with different swift heavy ions viz., 175 MeV Ni13+ ions, 140 MeV Si10+ ions, 100 MeV F8+ ions, 95 MeV O7+ ions and 48 MeV Li3+ ions in the same dose range of 100 krad–100 Mrad. The different electrical characteristics of MOSFETs were studied before and after irradiation and after annealing. The degradation and recovery mechanisms were studied systematically. It was found that around 80 % degradation in transconductance and mobility and almost 100 % recoveries in the electrical characteristics of irradiated MOSFETs after annealing.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12

Similar content being viewed by others

References

  1. T R Oldham and F B McLean IEEE Trans. Nucl. Sci. 50 483 (2003)

    Article  ADS  Google Scholar 

  2. S T Pantelides, S N Rashkeev, R Buczko, D M Fleetwood and R D Schrimpf IEEE Transactions on Nuclear Science 47 2262 (2000)

    Article  ADS  Google Scholar 

  3. A Al-Mohamad and M Chahoud Nucl. Inst. and Meth. in Phys. Res. A 579 833 (2007)

  4. A P Gnana Prakash, S C Ke and K Siddappa Radiation Effects and Defects in Solids 158 635 (2003)

  5. A P Gnana Prakash, S C Ke and K Siddappa Semicond. Sci. Technol. 18 1037 (2003)

  6. A Balasinski and T P Ma IEEE Trans. Nucl. Sci. 40 1286 (1993)

    Article  ADS  Google Scholar 

  7. A Phanse, D Sharma, A Mallik and J Vasi J. Appl. Phy. 74 757 (1993)

    Article  ADS  Google Scholar 

  8. S C Sun and J D Plummer IEEE Trans. Electron Dev. ED 27 1497 (1980)

    Article  Google Scholar 

  9. N Pushpa, K C Praveen, A P Gnana Prakash, S K Gupta and D Revannasiddaiah Curr. Appl. Phys 13 66 (2013)

    Article  ADS  Google Scholar 

  10. K Takakura et al. Semicond. Sci. Technol. 18 506 (2003)

    Article  ADS  Google Scholar 

  11. D Kanjilal et al. Nucl. Instrum. Methods Phys. Res., Sect. B. 328 97 (1993)

    Article  Google Scholar 

  12. http://elsmar.com/pdf_files/Military%20Standards/Mil-Std-883.pdf (2010)

  13. J F Ziegler, M D Ziegler and J P Biersack Nucl. Instrum. Methods Phys. Res., Sect. B 268 1818 (2010)

    Article  ADS  Google Scholar 

  14. SRIM Software Package http://www.srim.org (2011)

  15. Surendra Singh Rathod, A K Saxena and Sudeb Dasgupta IETE Technical review 28 451 (2011)

    Article  Google Scholar 

  16. J Zhang, I Pintilie, E Fretwurst, R Klanner, H Perrey and J Schwandt J Synchrotron Rad. 19 340 (2012)

    Article  Google Scholar 

  17. P J McWhorter and P S Winokur Appl. Phy. Lett. 48 133 (1986)

    Article  ADS  Google Scholar 

  18. N Pushpa et al. Nucl. Instrum. Methods Phys. Res., Sect. A. 613 280 (2010)

    Article  ADS  Google Scholar 

  19. N Stojadinovic et al. Serbian Journal of electrical engineering 1 89 (2003)

    Article  Google Scholar 

  20. N Pushpa et al. Nucl. Instrum. Methods Phys. Res., Sect. B 273 40 (2012)

    Article  ADS  Google Scholar 

  21. I Manic, S Djoric-Veljkovic, V Davidovic, D Dankovic, S Golubovic and N Stojadinovic IET Circuits Devices Syst. 2 213 (2008)

    Article  Google Scholar 

  22. S Dimitrijev, S Golubovic, D Zupac, M Pejovic and N Stojadinovic Solid-State Electron. 32 349 (1989)

    Article  ADS  Google Scholar 

  23. D Zupac, K F Galloway, P Khosropour, S R Anderson and R D Schrimpf IEEE Trans. Nucl. Sci. 40 1307 (1993)

    Article  ADS  Google Scholar 

  24. B F McLean and E H Boesch Jr IEEE Trans. Nucl. Sci. 36 1772 (1989)

    Article  ADS  Google Scholar 

Download references

Acknowledgments

The authors acknowledge with thanks to Dr D Kanjilal, Dr D K Avasthi and Dr Ambuj Tripathi, IUAC, New Delhi, India for their help and encouragement to do this work. This work is carried out under the project supported by DAE-BRNS (Project No. 2009/37/35/BRNS/2275) and DST (Project No. SR/S2/CMP-0034/2012), Government of India.

Author information

Authors and Affiliations

  1. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore, 570025, India

    N. Pushpa

  2. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, 570006, India

    A. P. Gnana Prakash

Authors
  1. N. Pushpa
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. P. Gnana Prakash
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. Pushpa.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Pushpa, N., Gnana Prakash, A.P. Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors. Indian J Phys 89, 943–950 (2015). https://doi.org/10.1007/s12648-015-0659-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12648-015-0659-y

Keywords

PACS Nos.

Search

Navigation