Skip to main content
Log in

Organic diode with high rectification ratio made of electrohydrodynamic printed organic layers

  • Published:
Electronic Materials Letters Aims and scope Submit manuscript

Abstract

In this paper, an all-printed organic diode to reveal a high rectification ratio (∼1.2 × 104) is proposed using organic heterojunction materials N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) and fullerene (C60). The proposed organic diode is fabricated as a structure of ITO/TPD/C60/Al on a glass substrate through an all-printed electrohydrodynamic (EHD) technique, which has an effective area of 2 × 2 mm2. The threshold voltage of the forward bias is 1.2 V and the current density reaches 550 mA/cm2 at 3 V. The device is characterized by current voltage I-V at temperature 30°C to 120°C, and junction capacitance is analyzed at 4 kHz frequency at ±2 V. To verify the successful construction of all layers deposited through the EHD technique, morphology analysis was carried out with FE-SEM. From these measured electrical characteristics, suitability for rectification purposes in printed electronics is confirmed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W. P. Su, Rev. Mod. Phys. 60, 781 (1988).

    Article  Google Scholar 

  2. S. Ali, J. Bae, C. H. Lee, K. H. Choi, and Y. H. Doh, Org. Electron. 25, 225 (2015).

    Article  Google Scholar 

  3. T. Sekitani, K. Zaitsu, Y. Noguchi, K. Ishibe, M. Takamiya, T. Sakurai, and T. Someya, IEEE Trans. Electron. Dev. 56, 1027 (2009).

    Article  Google Scholar 

  4. S. R. Forrest, Nature 428, 911 (2004).

    Article  Google Scholar 

  5. Y. Noh and O. Song, Electron. Mater. Lett. 10, 981 (2014).

    Article  Google Scholar 

  6. S. Ali, J. Bae, and C. H. Lee, Opt. Express 23, 30583 (2015).

    Article  Google Scholar 

  7. T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya, Science 326, 1516 (2009).

    Article  Google Scholar 

  8. L. Zhang, Q. Li, F. Wang, C. Qu, and F. Zhao, Electron. Mater. Lett. 10, 661 (2014).

    Article  Google Scholar 

  9. E. Cantatore, T. C. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. Gruijthuijsen, L. Schrijnemakers, S. Drews, and D. M. de Leeuw, Solidstate circuits, IEEE J. 42, 84 (2007).

    Article  Google Scholar 

  10. S. Steudel, K. Myny, V. Arkhipov, C. Deibel, S. De Vusser, J. Genoe, and P. Heremans, Nature Mater. 4, 597 (2005).

    Article  Google Scholar 

  11. D. Im, H. Moon, M. Shin, J. Kim, and S. Yoo, Adv. Mater. 23, 644 (2011).

    Article  Google Scholar 

  12. H. Kleemann, S. Schumann, U. Jörges, F. Ellinger, K. Leo, and B. Lüssem, Org. Electron. 13, 1114 (2012).

    Article  Google Scholar 

  13. H. Usta, A. Facchetti, and T. J. Marks, Acc. Chem. Res. 44, 501 (2011).

    Article  Google Scholar 

  14. J. Smith, W. Zhang, R. Sougrat, K. Zhao, R. Li, D. Cha, A. Amassian, M. Heeney, I. McCulloch, and T. D. Anthopoulos, Adv. Mater. 24, 2441 (2012).

    Article  Google Scholar 

  15. M. Mustafa, H. C. Kim, Y. H. Doh, and K. H. Choi, J. Matter. Sci-Matter. El. 24, 4321 (2013).

    Article  Google Scholar 

  16. Z. Nan, L. Qian, M. Jie, L. Zun-Feng, Y. Li-Ying, Y. Shou-Gen, and C. Yong-Sheng, Chin. Phys. Lett. 25, 1091 (2008).

    Article  Google Scholar 

  17. T. Yamada, T. Sato, K. Tanaka, and H. Kaji, Org. Electron. 11, 255 (2010).

    Article  Google Scholar 

  18. S. Ali, J. Bae, K. H. Choi, C. H. Lee, Y. H. Doh, S. Shin, and N. P. Kobayashi, Org. Electron. 17, 121 (2015).

    Article  Google Scholar 

  19. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, Third ed., John Wiley & Sons Inc, Hoboken, NJ (2007).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Jinho Bae.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ali, S., Bae, J. & Lee, C.H. Organic diode with high rectification ratio made of electrohydrodynamic printed organic layers. Electron. Mater. Lett. 12, 270–275 (2016). https://doi.org/10.1007/s13391-015-5202-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s13391-015-5202-y

Keywords

Navigation