Abstract
Semiconductor photocatalysis has two important applications: environmental remediation and H2 production. Bismuth vanadate has attracted great interests as an ideal candidate for use as high-performance photocatalysts for visible light-driven water splitting and photoanode in photoelectrochemical cells. Single crystal film is invaluable to deepen the fundamental understanding of materials. The object of this article was to provide a brief review on the advances in the preparation of epitaxial BiVO4 thin film, the physical and photoelectrochemical properties. The epitaxial BiVO4 thin film could be fabricated on (001) yttria-stabilized cubic zirconia or SrTiO3(001) by molecular beam epitaxy, chemical vapor deposition, and, pulsed laser deposition. Three crystal structures, namely, monoclinic scheelite, monoclinic clinobisvanite, and orthorhombic, were mentioned in the literatures. The optical band gap was reported to be 2.5~2.7 eV for a direct transition. The highest photocurrent of 4.83 mA cm−2at 1.23 V vs. the RHE was obtained at the sample with Lu2O3 as a hole blocking layer.
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This work was supported by Education Department of Henan Province, China (17HASTIT014). Y. Zhang revised English of manuscript.
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Zhang, Y., Li, G. Recent Advances of Epitaxial BiVO4 Thin Film: Preparation and Physical and Photoelectrochemical Properties. Braz J Phys 50, 185–191 (2020). https://doi.org/10.1007/s13538-019-00730-0
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DOI: https://doi.org/10.1007/s13538-019-00730-0