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Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications

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Abstract

Developing and optimizing FET platforms for label free bio molecule detection has gained huge interest in recent years. This paper presents a charge control model based sensitivity analysis of an optimized GaN HEMT for pH and biomarker detection. Analytical modeling, simulation and fabrication of the device have been discussed in this paper with focus on its sensing application. The overall aim is to enhance the sensitivity of AlGaN/GaN HEMT by epitaxial optimization and contact optimizations and deliver a highly efficient end product with desired sensitivity for bio/chemical detection.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, 302017, India

    Chinnamuthan Periasamy & Arathy Varghese

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  1. Chinnamuthan Periasamy
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  2. Arathy Varghese
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Correspondence to Chinnamuthan Periasamy.

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Periasamy, C., Varghese, A. Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications. CSIT 7, 187–190 (2019). https://doi.org/10.1007/s40012-019-00233-y

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  • DOI: https://doi.org/10.1007/s40012-019-00233-y

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