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GaN and Ga2O3-based wide bandgap semiconductor devices for emerging nanoelectronics

  • S.I. : Visvesvaraya
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Abstract

III-nitride wide bandgap semiconductors such as alloys of (Al, Ga, In) N play a vital role in high frequency, power electronics, and opto-nanoelectronics applications. Apart from this recently, wide bandgap semiconductor, β-Ga2O3 has attracted the attention of worldwide researchers as an alternative of GaN substrates due to its low-cost processing and wide availability of large scale wafers. Due to its suitable material properties, β-Ga2O3 can also be used for high frequency and high power electronics applications. In this paper the quantum transport in AlN/β-Ga2O3 based high electron mobility transistor (HEMT) along with the compact model development of GaN-based metal oxide semiconductor (MOS)-HEMT is presented for high frequency and high power electronics. Finally, the modeling and simulations of InGaN based nanowire is developed for solar photovoltaics and opto-nanoelectronics applications.

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Acknowledgeement

This publication is an outcome of the R&D work undertaken in the project under the Visvesvaraya Ph.D. Scheme of MeitY, Govt. of India, being implemented by Digital India Corporation. The author acknowledges Dr. Greg Snider of University of Notre Dame, USA for developing 1D Poisson/Schrödinger solver which is used to carry out some part of the research.

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  1. Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    T. R. Lenka

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  1. T. R. Lenka
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Lenka, T.R. GaN and Ga2O3-based wide bandgap semiconductor devices for emerging nanoelectronics. CSIT 8, 105–110 (2020). https://doi.org/10.1007/s40012-020-00290-8

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  • DOI: https://doi.org/10.1007/s40012-020-00290-8

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