Abstract
We have studied charging effects in a lateral split-gate quantum dot defined by metal gates in the two dimensional electron gas (2 DEG) of a GaAs/AlGaAs heterostructure. The gate structure allows an independent control of the conductances of the two tunnel barriers separating the quantum dot from the two 2 DEG leads, and enables us to vary the number of electrons that are localized in the dot. We have measured Coulomb oscillations in the conductance and the Coulomb staircase in current-voltage characteristics and studied their dependence on the conductances of the tunnel barriers. We show experimentally that at zero magnetic field charging effects start to affect the transport properties when both barrier conductances are smaller than the first quantized conductance value of a point contact at 2e 2/h. The experiments are described by a simple model in terms of electrochemical potentials, which includes both the discreteness of the electron charge and the quantum energy states due to confinement.
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Note thatV l , andV r as defined here differ form the results of ordinary circuit analysis, e.g. capacitor divider equations. This comes from our inclusion of the discrete electron charge, while circuit analysis implicitly assumes a continuous charge fluid
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Kouwenhoven, L.P., van der Vaart, N.C., Johnson, A.T. et al. Single electron charging effects in semiconductor quantum dots. Z. Physik B - Condensed Matter 85, 367–373 (1991). https://doi.org/10.1007/BF01307632
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DOI: https://doi.org/10.1007/BF01307632