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Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition

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Abstract

The use of amorphous and transparent oxides is a key for the development of new thin film transistors and displays. Recently, indium zinc oxide (IZO) was shown to exhibit high transparency in the visible range, low resistivity, and high mobility. Since the properties and the cost of these films depend on the In/(In + Zn) values, the measurement of this ratio is paramount for future developments and applications. We report on accurate analysis of the elemental composition of IZO thin films synthesized using a Combinatorial Pulsed Laser Deposition technique. The monitoring of the thin films elemental composition by Laser-Induced Breakdown Spectroscopy was chosen in view of further in situ and real-time technological developments and process control during IZO fabrication. Our analytical approach is based on plasma modeling, the recorded spectra being then compared to the spectral radiance computed for plasmas in local thermal equilibrium. The cation fractions measured were compared to values obtained by complementary measurements using energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. Spectroscopic ellipsometry assisted the scientific discussion. A good agreement between methods was found, independently of the relative fraction of indium and zinc that varied from about 65 to 90 and 35 to 10 at%, respectively, and the measurement uncertainties associated to each analytical method.

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Acknowledgments

EA, GS and VC acknowledge the financial support of PN-II-ID-PCE-2012-4-0467 project. LMT and ACG acknowledge the Romanian Ministry of Education—PN-II-RU-TE-2011-3-0016 Project—for their financial support. The Algerian Minister of Higher Education and Scientific Research is acknowledged for supporting the internship of Sid Ahmed Beldjilali at the LP3 Laboratory.

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Authors and Affiliations

  1. Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, 077125, Măgurele-Bucharest, Romania

    E. Axente, G. Socol, C. R. Luculescu & V. Craciun

  2. LP3, CNRS-Aix-Marseille University, Luminy, Marseille, France

    S. A. Beldjilali, L. Mercadier & J. Hermann

  3. LPPMCA, USTOMB-Université des Sciences et de la Technologie d’Oran, BP 1505, El M’Naouer, 31000, Oran, Algeria

    S. A. Beldjilali

  4. Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, 077125, Măgurele-Bucharest, Romania

    L. M. Trinca & A. C. Galca

  5. National Institute of Physics and Nuclear Engineering Horia Hulubei, 077125, Măgurele-Bucharest, Romania

    D. Pantelica & P. Ionescu

  6. Apel Laser, 20A Constructorilor Blvd, 060512, Bucharest, Romania

    N. Becherescu

Authors
  1. E. Axente
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  2. G. Socol
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  3. S. A. Beldjilali
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  4. L. Mercadier
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  5. C. R. Luculescu
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  6. L. M. Trinca
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  7. A. C. Galca
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  8. D. Pantelica
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  9. P. Ionescu
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  10. N. Becherescu
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  11. J. Hermann
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  12. V. Craciun
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Corresponding author

Correspondence to V. Craciun.

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Axente, E., Socol, G., Beldjilali, S.A. et al. Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition. Appl. Phys. A 117, 229–236 (2014). https://doi.org/10.1007/s00339-014-8427-y

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  • DOI: https://doi.org/10.1007/s00339-014-8427-y

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