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Induced quantum-Fano effect by Raman scattering and its correlation with field emission properties of silicon nanowires

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Abstract

Here, we report the effect of crystal size and aspect ratio on field emission (FE) properties of silicon nanowire (Si-NWs) fabricated onto n-type Si (100) using metal-induced chemical etching (MIE) technique. The optical band gap calculation from the diffuse reflection spectra reveals the decrement in the band gap of Si-NWs from 1.98 to 1.69 eV. Here, band gap-dependent hyperbolic band model has been used to estimate the crystal size present in Si-NWs, which shows the quantum confinement (QC) effect. XPS studies indicate that the samples clearly exhibit the presence of oxidation state of Si (0) in Si-NWs. Long-range order Raman scattering has been analyzed for confirmation of quantum-Fano effect presence in Si-NWs due to red shift and asymmetry behavior of Raman band, which has been observed from Si-NWs as compared to its bulk counterpart. Moreover, a theoretical Raman line fitting model has been used to estimate the crystal size present in Si-NWs. The electron field emission properties of Si-NWs have been studied using current–voltage (I–V) measurements followed by a theoretical analysis through the Fowler–Nordheim (F–N) equation as a function of the crystal size. The electron field emission studies show the smaller crystal size has a lower turn-on voltage. Moreover, it has been found that the aspect ratio of Si-NWs linearly varies with the field enhancement factor.

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Acknowledgements

Vikas kashyap acknowledges financial support as SRF from University Grant Commission (UGC) India. He also acknowledges the sophisticated Sophisticated Analytical Instrumentation Facility (SAIF) and Prof. Ghan Shyam Singh Saini (Department of Physics, Panjab University Chandigarh) for using and recording the Raman Spectroscopy facility of their lab.

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Authors and Affiliations

  1. Department of Physics, Panjab University, Chandigarh, 160014, India

    Vikas Kashyap & Neeru Chaudhary

  2. Departamento de Física, Facultad de Ciencias, Universidad Católica del Norte, Avenida Angamos 0610, Casilla 1280, Antofagasta, Chile

    Chandra Kumar

  3. Department of Physics, Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, Chennai, 600127, India

    Vivek Kumar

  4. Department of Applied Sciences, Kamla Nehru Institute of Technology, Sultanpur, Uttar Pradesh, 228118, India

    Kapil Saxena

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  1. Vikas Kashyap
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Kashyap, V., Kumar, C., Kumar, V. et al. Induced quantum-Fano effect by Raman scattering and its correlation with field emission properties of silicon nanowires. Appl. Phys. A 128, 312 (2022). https://doi.org/10.1007/s00339-022-05415-1

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