Zusammenfassung
Die Untersuchung der strukturellen Eigenschaften von diamantähnlichen Kohlenstoffbasisschichten war das Ziel dieser Arbeit. Schichten der strukturellen Systeme, wie wasserstoffhältige tetraedrisch gebundene amorphe Kohlenstoffschichten (ta-C:H), Silizium dotierte wasserstoffhältige amorphe Kohlenstoffschichten (a-C:H:Si) und Stickstoff dotierte amorphe Kohlenstoffschichten (a-C:N), wurden mit den Verfahren Ionenstrahlabscheidung, reaktives Magnetronkathoden-Zerstäuben und gepulste Laser-Dampfphasenabscheidung im infraroten Wellenlängenbereich (IR-PLD; λ=1064 nm) hergestellt. Mit Hilfe der Raman-Spektroskopie konnte gezeigt werden, dass im Falle von Abscheidetechniken mit hohen Ionenenergien (Ionenstrahlabscheidung) der schichtbildenden Kohlenstoffspezies eine Kontrolle der Struktur der ta-C:H-Schichten über die Entladungsspannung, d. h. ~ Partikelenergie, möglich ist. Im Gegensatz dazu erfordert die Optimierung der Schichtstruktur und der Schichteigenschaften der a-C:H:Si- und a-C:N-Schichten die Untersuchung der Einflüsse der Inert-Gas/Reaktiv-Gas-Flüsse und der Reaktivgasart beim Magnetronkathoden-Zerstäuben und bei der IR-PLD.
Summary
The investigation of the film structure of diamond-like carbon films was the main objective of this work. Films within the structural systems of hydrogenated tetrahedral amorphous carbon (ta-C:H), silicon doped hydrogenated amorphous carbon (a-C:H:Si) and nitrogen doped amorphous carbon (a-C:N) were deposited at substrate temperatures of well below 100 °C. As deposition methods ion beam deposition, reactive unbalanced magnetron sputtering of silicon as well as infrared pulsed laser deposition (IR-PLD; λ=1064 nm) were studied. By the use of Raman spectroscopy it was found, that for high kinetic ion energy film deposition processes, i.e. ion beam deposition, the structure and properties of the ta-C:H films can be controlled by the kinetic energy of carbon species involved during film growth. For deposition techniques being typically known for low ion energies like magnetron sputtering or IR-PLD, applied for deposition of a-C:H:Si and a-C:N films, process tuning involves the study of the effects of inert gas/ reactive gas flow and the type of the reactive gas.
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Kahn, M., Waldhauser, W. Raman Spectroscopy of Carbon Based Films – Spectra Interpretation and Selected Applications. Berg Huettenmaenn Monatsh 155, 534–540 (2010). https://doi.org/10.1007/s00501-010-0612-5
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DOI: https://doi.org/10.1007/s00501-010-0612-5