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A simplified over-temperature protection structure for smart power ICs

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Abstract

This work introduces and compares four types of over temperature protection circuit in 0.25 μm BCD technology. The core temperature detection circuit of the four types are formed by a single BJT, double BJT, double MOSFET, BJT and MOSFET, respectively. Through the constructive analysis, it can be found that the fourth design is the most suitable one to be used in practice. Captured data shows that the proposed design circuit can effectively work under 200 °C, and its bias current has a power supply rejection ratio more than 72.08 dB. The small enough process corner deviation (maximum process corner deviation is 8.4 °C), good robustness, small chip area (the core chip area is 0.089 mm2) and lower power consumption make this design suitable for practical application, especially, for smart power ICs.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (Grant No. 61874135).

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Authors and Affiliations

  1. Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Liqiang Ding, Xiaowu Cai, Ruirui Xia & Fazhan Zhao

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Liqiang Ding & Ruirui Xia

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  1. Liqiang Ding
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  2. Xiaowu Cai
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Correspondence to Liqiang Ding.

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Ding, L., Cai, X., Xia, R. et al. A simplified over-temperature protection structure for smart power ICs. Analog Integr Circ Sig Process 111, 451–460 (2022). https://doi.org/10.1007/s10470-022-02029-8

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