Skip to main content
SpringerLink
Log in

A new growth method of high-quality precipitate-free HTS thin films applied for electronics

  • Section 2: Thin Film
  • Published:
Journal of Electroceramics Aims and scope Submit manuscript

Abstract

We report successful growth of high-quality thin films with clean and completely precipitate-free surface, suitable for device applications, by applying a new concept and method to the substrates. The concept consists in generation of artificial steps of controlled height and width, and desired shape on the surface of the substrate. The width of the step is chosen so that it is equal to the double of the migration (surface diffusion) length of the atomic species in the growth process of the film. If precipitates occur, they will be selectively gathered to the step edge where the free energy is lowest. Using this new method, we have successfully obtained by MOCVD high-quality precipitate-free Bi-2223 and Bi-2223/Bi-2212-superlattice thin films on (100) SrTiO3 substrates with artificial steps of controlled width and height. These as-grown films have been further used to fabricate patterned intrinsic Josephson junctions. Completely precipitate-free films offer a strong advantage for integration, and generate new possibilities for the device fabrication.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Endo, H. Yamasaki, S. Misawa, S. Yoshida, and K. Kajimura, Nature, 355, 327 (1992).

    Article  CAS  Google Scholar 

  2. J.N. Eckstein, I. Bozovic, D.G. Schlom, and J.S. Harris, J. Appl. Phys. Lett., 57, 1049 (1990).

    Article  CAS  Google Scholar 

  3. ] I. Bozovic, IEEE Trans. Appl. Supercond., 11(part 3), 2686 (2001).

    Article  Google Scholar 

  4. T. Ishibashi, H. Soutome, Y. Okada, and M. Kawabe, J. Crystal Growth, 150, 1 (1995).

    Article  Google Scholar 

  5. H. Sato, H. Akoh, K. Nishihara, M. Aoyagi, and S. Takada, Jpn. J. Appl. Phys., 31(Part 2), L1044 (1992).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology (KIT), 1-3-4 Atago, Minato-ku, Tokyo, 105-0002, Japan

    K. Endo

  2. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

    K. Endo

  3. High Field Lab. for Superconducting Materials, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan

    P. Badica

  4. National Institute of Materials Physics (INCDFM), POB MG-7, 077125, Bucharest, Romania

    P. Badica

  5. Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, 305-8562, Japan

    H. Sato & H. Akoh

Authors
  1. K. Endo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Badica
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Sato
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Akoh
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K. Endo.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Endo, K., Badica, P., Sato, H. et al. A new growth method of high-quality precipitate-free HTS thin films applied for electronics. J Electroceram 16, 599–603 (2006). https://doi.org/10.1007/s10832-006-9926-9

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10832-006-9926-9

Keywords

Search

Navigation