Abstract
We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
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Acknowledgements
This work has been supported by CIUNT under Grants 26/E439, by ANPCyT-PICTR 20770, 35682 and by PROALAR-DAAD DA0805.
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Golmar, F., Villafuerte, M., Mudarra Navarro, A. et al. ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?. J Mater Sci 45, 6174–6178 (2010). https://doi.org/10.1007/s10853-010-4710-2
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DOI: https://doi.org/10.1007/s10853-010-4710-2