Abstract
0.89(Na0.5Bi0.5)TiO3–0.11BaTiO3, (BNT-BT0.11) thin film was fabricated by sol–gel/spin coating process, on platinized silicon wafer. Perovskite structure with random orientation of crystallites has been obtained at 700 °C. Piezoelectric activity of BNT-BT0.11 thin film was detected using piezoresponse force microscopy (PFM). Effective piezoelectric coefficient d33eff of such film, recorded at 5 V applied dc voltage, was ~29 pm/V, which is similar to other BNT-BTx thin films. The complex refractive index and dielectric function of BNT-BT0.11 thin films were also investigated. The high leakage current density significantly influences the dielectric, ferroelectric, and piezoelectric properties of the BNT-BT0.11 films.
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Hiruma Y, Watanabe Y, Nagata H, Takenaka T (2007) Key Eng Mater 350:93
Zvirgzds JA, Kapostis PP, Zvirgzde JV (1982) Ferroelectrics 40:75
Trujillo S, Kreisel J, Jiang Q, Smith JH, Thomas PA, Bouvier P, Weiss F (2005) J Phys 17:6587
Chiang YM, Farrey GW, Soukhojak AN (1998) Appl Phys Lett 73:3683
Takenaka T, Maruyama K, Sakata K (1991) Jpn J Appl Phys 30:2236
Chu BJ, Chen DR, Li GR, Yin QR (2002) J Eur Ceram Soc 22:2115
Chen M, Xu Q, Kim BH, Ahn BK, Ko JH, Kang WJ, Nam OJ (2008) J Eur Ceram Soc 28:843
Rout D, Moon KS, Rao VS, Kang SJL (2009) J Ceram Soc Jpn 117:797
Yilmaz H, Messing GL, Trolier-McKinstry S (2003) J Electroceram 11:207
Yilmaz H, Trolier-McKinstry S, Messing GL (2003) J Electroceram 11:217
Alonso-Sanjose D, Jimenez R, Bretos I, Calzada ML (2009) J Am Ceram Soc 92:2218
Cernea M, Andronescu E, Radu R, Fochi F, Galassi C (2010) J Alloy Compd 490:690
Ge W, Liu H, Zhao X, Pan X, He T, Lin D, Xu H, Luo H (2008) J Alloy Compd 456:503
Zhang ST, Kounga AB, Aulbach E, Deng Y (2008) J Am Ceram Soc 91:3950
Cheng HW, Zhang XJ, Zhang ST, Feng Y, Chen YF, Liu ZG, Liu GX (2004) Appl Phys Lett 85:2319
Dinescu M, Craciun F, Scarisoreanu N, Verardi P, Moldovan A, Purice A, Sanson A, Galassi C (2005) J Phys IV France 128:77
Scarisoreanu N, Craciun F, Ion V, Birjega S, Dinescu M (2007) Appl Surf Sci 254:1992
Zhang DZ, Zheng XJ, Feng X, Zhang T, Sun J, Dai SH, Gong LJ, Gong YQ, He L, Zhu Z, Huang J, Xu X (2010) J Alloy Compd 504:129
Brinker J, Scherer GW (1990) Sol-gel science: the physics and chemistry of sol-gel processing. Academic Press Inc, Boston
Ryu SO (1999) Synthesis and characterization of ferroelectric (1 − x)SrBi2Ta2O9−xBi3TaTiO9 thin films for non-volatile memory applications. https://doi.org/scholar.lib.vt.edu/theses/available/etd-050699-154541/unrestricted/Chapter5.pdf
Chang DA, Choh YH, Hsieh WF, Lin P, Tseng TY (1993) J Mater Sci 28:6691. doi:https://doi.org/10.1007/BF00356416
Fujiwara H (2007) Spectroscopic ellipsometry: principles and applications. Wiley, West Sussex
Bass M (ed) (2009) Handbook of optics, 3rd edn, vol 4: optical properties of materials, nonlinear optics, quantum optics. McGraw-Hill Comp, Inc., New York
Ferlauto AS, Ferreira GM, Pearce JM, Wronski CR, Collins RW, Deng X, Ganguly G (2002) J Appl Phys 92:2424
Stan GE, Pasuk I, Galca AC, Dinescu A (2010) Dig J Nanomater Biostruct 5:1041
Ma C, Tan X (2010) Solid State Commun 150:497
Zhou ZH, Xue JM, Li WZ, Wang J, Zhu H, Miao JM (2004) Appl Phys Lett 85:804
Takenaka T, Sakata K (1989) Ferroelectrics 95:153
Acknowledgement
We thank the Romanian National Program PNCDI II, Contract No. 72-153/2008, and the Romanian National Authority for Scientific Research (PN09-450101, Contract No. 45N/1.03.2009) for the financial support.
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Cernea, M., Galca, A.C., Cioangher, M.C. et al. Piezoelectric BNT-BT0.11 thin films processed by sol–gel technique. J Mater Sci 46, 5621–5627 (2011). https://doi.org/10.1007/s10853-011-5512-x
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DOI: https://doi.org/10.1007/s10853-011-5512-x