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Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates

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Abstract

Ferroelectric/electric properties of PbZr0.52Ti0.48O3 (PZT) thin films grown by pulsed laser deposition (PLD) on two different substrates, Si (001) and SrTiO3 (STO) (001), were comparatively analyzed. The structural characterization has revealed the epitaxial relationship between the grown layers and the two types of substrates, with larger density of structural defects for the films deposited on Si (001) with buffer STO layer. The ferroelectric/electric properties are also different, with lower remnant polarization (about half of the value obtained on STO substrate), higher dielectric constant (about two times larger), and lower leakage current (about two orders of magnitude lower) for the PZT films deposited on Si (001) compared to those deposited on (001) STO substrates. Nevertheless, the results show that the use of a STO buffer layer on Si can be a solution to obtain good quality PZT capacitor structures without using expensive single-crystal oxide substrates. In this way, applications based on PZT capacitors (e.g. non-volatile memories, pyroelectric detectors, light switches, etc.) would be more easily integrated directly on Si wafers.

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Acknowledgements

The authors acknowledge the financial support of the Romanian Ministry of Education-Executive Unit for Funding High Education, Research, Development and Innovation (MEN-UEFISCDI) through the Idea-Complex Research Grant PN-II-ID-PCCE-2011-2-0006 (contract nr. 3/2012). The authors wish to thank also Guillaume Saint-Girons, G. Niu, and Y. Robach from Institute des Nanotechnologies de Lyon Ecole Centrale de Lyon 36, Avenue Guy de Collongue 69134 Ecully, France for providing the Si substrates with the STO buffer layer deposited by MBE. Andra Georgia Boni thanks the strategic Grant POSDRU/159/1.5/S/137750, “Project Doctoral and Postdoctoral programs support for increased competitiveness in Exact Sciences research” co-financed by the European Social Found within the Sectorial Operational Program Human Resources Development 2007–2013.

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Authors and Affiliations

  1. National Institute of Materials Physics, Atomistilor 105bis, 77125, Magurele, Ilfov, Romania

    Cristina Chirila, Andra Georgia Boni, Iuliana Pasuk, Raluca Negrea, Lucian Trupina, Ioana Pintilie & Lucian Pintilie

  2. CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France

    Gwenael Le Rhun & Shi Yin

  3. INL, CNRS UMR5270, Ecole Centrale de Lyon, Université de Lyon, 36 avenue Guy de Collongue, 69134, Ecully Cedex, France

    Shi Yin & Bertrand Vilquin

  4. Faculty of Physics, University of Bucharest, 077125, Magurele, Romania

    Andra Georgia Boni

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  1. Cristina Chirila
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Correspondence to Cristina Chirila.

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Chirila, C., Boni, A.G., Pasuk, I. et al. Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates. J Mater Sci 50, 3883–3894 (2015). https://doi.org/10.1007/s10853-015-8907-2

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