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Effect of in-plane ordering on dielectric properties of highly {111}-oriented bismuth–zinc–niobate thin films

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Abstract

Bi1.5−x Zn0.92−y Nb1.5O6.92−δ (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111}Pt/TiO2/SiO2/(100)Si substrate (Pt/Si) and epitaxial {111}Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65:35 on Pt/Si and 80:20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (~0.05).

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Acknowledgements

The authors acknowledge the Romanian Ministry of Research and Innovation (core program/project PN-III-16-48-02) for their financial support. I. Peron and F. Gouttefangeas are acknowledged for EDS analyses and J. Le Lannic for FE-SEM images taken at CMEBA (ScanMAT, UMS 2001 CNRS-University of Rennes 1) which received a financial support from the Région Bretagne and the European Union (CPER-FEDER 2007–2014, Présage Nos. 39126 and 37339).

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Author notes

  1. A. Le Febvrier

    Present address: Thin Film Physics Group, Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden

Authors and Affiliations

  1. Institut des Sciences Chimiques de Rennes, UMR CNRS 6226, Université de Rennes 1, Campus de Beaulieu, 35042, Rennes Cedex, France

    A. Le Febvrier, S. Députier, V. Demange, V. Bouquet & M. Guilloux-Viry

  2. National Institute of Materials Physics, Atomistilor 405A, 077125, Magurele, Ilfov, Romania

    A. C. Galca, A. Iuga & L. Pintilie

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  1. A. Le Febvrier
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  2. S. Députier
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Correspondence to S. Députier or A. C. Galca.

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Le Febvrier, A., Députier, S., Demange, V. et al. Effect of in-plane ordering on dielectric properties of highly {111}-oriented bismuth–zinc–niobate thin films. J Mater Sci 52, 11306–11313 (2017). https://doi.org/10.1007/s10853-017-1297-x

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