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A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) measurements

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Abstract

In this work, both the Al-(p-Si) (MS) and Al-(Al2O3:PVP)-(p-Si) (MPS) structures were grown onto the same p-type Si wafer in the same conditions to determine the (Al2O3:PVP) organic-interlayer whether the MPS build improves performance or not. For this aim, first, X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) was used to investigate the structure of the (Al2O3-PVP) inter-layer. Secondly, both the current–voltage (I–V) and capacitance/conductance-frequency (C/G)-f measurements of them were performed at ambient temperature to the comparison of their electric and dielectric properties. Energy-dependence profile of surface states (Nss) was extracted from the positive bias I–V data by considering the voltage-dependence of BH and n. We found that the (Al2O3: PVP) inter-layer leads to a decrease in surface-states (Nss), ideality-factor (n), leakage-current, series-resistance (Rs), and increase in barrier (BH), shunt resistance (Rsh), rectification-ratio (RR = Ifor./Irev. at ± 6 V). Dielectric permittivity and loss (ε′, ε″), loss-tangent (tan δ), real & imaginary components of electric modulus (M′, M″), and ac-conductivity (σac) were extracted from the C-f and G-f measurements in the wide frequency range of 200 Hz-1 MHz at 1.5 V. The observed higher values in the ε′ and ε″ at lower frequencies for MS and MPS structures were attributed to the Nss and easy polarization of interlayer under electric field.

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Data availability

The datasets analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey

    B. Akin & Ş. Altındal

  2. The Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan, 45137-6673, Iran

    J. Farazin

  3. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    Y. Azizian-Kalandaragh

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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by the corresponding author Dr. Buket Akin. The first revised draft of the manuscript was written by Dr. Buket Akin and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Akin, B., Farazin, J., Altındal, Ş. et al. A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) measurements. J Mater Sci: Mater Electron 33, 21963–21975 (2022). https://doi.org/10.1007/s10854-022-08984-2

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