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SiO x -P2O5 films—promising components in photonic structure

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Abstract

We intend to prepare periodic multilayered structures for photonic applications. With this goal we have performed a study of some characteristics of SiO x -P2O5 films deposited by the sol–gel method on glass and ITO (InSnO x )-coated glass. The as prepared films were annealed to different temperatures (150 and 200°C). The chemical composition of the samples was determined by X-ray Photoelectron Spectroscopy (XPS). The XPS results revealed the presence of P in the as-deposited films. The structural an optical properties were examined by Fourier Transform Infrared Spectroscopy (FTIR), Spectroellipsometry (SE) and UV Transmission Spectroscopy. IR spectra of the deposited films attest the interaction of an amorphous SiO2 with the H3PO4 used as a P-precursor. Refractive indices for individual SiO x -P2O5 determined from SE measurements show a densification of the layer structure with the increasing temperature in the thermal treatment. The UV transmission spectra revealed a lower transmission for the sol-gel SiO x -P2O5 films as compared to ITO/glass substrate. AFM images proved the densification of the films with annealing in agreement with the ellipsometric results.

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Abbreviations

XPS:

X-ray photoelectron spectroscopy

FTIR:

Fourier transform infrared spectroscopy

SE:

Spectroellipsometry

UV–VIS:

Ultra-violet-visible spectroscopy

AFM:

Atomic force microscopy

ITO:

Indium tin oxide

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Authors and Affiliations

  1. National Institute of Research & Development for Optoelectronics, 1 Atomistilor St., P.O. Box MG-5, 77125, Com. Magurele, Bucharest, Jud. Ilfov, Romania

    I. Vasiliu, M. Elisa, C. Grigorescu & G. Pavelescu

  2. Institute of Physical Chemistry “Ilie Murgulescu”, 202, Splaiul Independentei, 060021, Bucharest, Romania

    M. Gartner, M. Anastasescu, L. Todan, L. Predoana & M. Zaharescu

  3. National Institute of R&D of Materials Physics, 105 bis Atomistilor St., Box-MG-7, 77125, Com. Magurele, Jud. Ilfov, Romania

    C. Negrila, C. Logofatu & M. Enculescu

  4. National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box: MG-36, 077125, Bucharest, Romania

    A. Moldovan

Authors
  1. I. Vasiliu
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  2. M. Gartner
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  3. M. Anastasescu
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  4. L. Todan
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  5. L. Predoana
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  6. M. Elisa
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  7. C. Grigorescu
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  8. C. Negrila
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  9. C. Logofatu
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  10. M. Enculescu
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  11. A. Moldovan
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  12. G. Pavelescu
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  13. M. Zaharescu
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Corresponding author

Correspondence to I. Vasiliu.

Additional information

The work was originally presented at “Physics of Photonic Crystals and Metamaterials (PPCM)” Workshop, Brussels, 12–15 June, 2006.

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Vasiliu, I., Gartner, M., Anastasescu, M. et al. SiO x -P2O5 films—promising components in photonic structure. Opt Quant Electron 39, 511–521 (2007). https://doi.org/10.1007/s11082-007-9096-2

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  • DOI: https://doi.org/10.1007/s11082-007-9096-2

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