Abstract
The luminescence characteristics of V-pits in InGaN/GaN quantum wells (QW) correlated directly with the microstructure of the V-pits, as studied by use of transmission electron microscopy with cathodoluminescence. {10-11}-Faceted V-pits, formed in the QW, produce more intense blue-shifted emission than {0001}-plane QW. A dead emission center seems to be present at the corner of the V-pit which connects the R-plane and C-plane QW. High-resolution transmission electron microscopy revealed formation of indium-deficient QW at the corners of the V-pits. High potential barriers occur because of the lack of indium around the hexagonal V-pit; this effectively blocks diffusion of carriers into the threading dislocations known to be non-radiative recombination centers. V-pits thus have promise for improving the internal quantum efficiency of light-emitting diodes.
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S.F. Chichibu, A. Uedono, T. Onuma, B.A. Haskell, A. Chakraborty, T. Koyama, P.T. Fini, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, Nat. Mater. 5, 810 (2006).
A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 95, 127402 (2005).
C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, Phys. Rev. B 76, 155322 (2007).
F. Hitzel, G. Klewer, S. Lahmann, U. Rossow, and A. Hangleiter, Phys. Rev. B 72, 081309 (2005).
J. Kim, Y.H. Cho, D.S. Ko, X.S. Li, J.Y. Won, E. Lee, S.H. Park, J.Y. Kim, and S. Kim, Opt. Express 22, A857 (2014).
Y.F. Li, F. Yun, X.L. Su, S. Liu, W. Ding, and X. Hou, J. Appl. Phys. 116, 123101 (2014).
J. Kim, J. Kim, Y. Tak, S. Chae, J.Y. Kim, and Y. Park, IEEE Electron Device Lett. 34, 1409 (2013).
K. Koike, S. Lee, S.R. Cho, J. Park, H. Lee, J.S. Ha, S.K. Hong, H.Y. Lee, M.W. Cho, and T. Yao, IEEE Photonic. Technol. Lett. 24, 449 (2012).
S.H. Han, D.Y. Lee, H.W. Shim, J.W. Lee, D.J. Kim, S. Yoon, Y.S. Kim, and S.T. Kim, Appl. Phys. Lett. 102, 251123 (2013).
H.-L. Tsai, T.-Y. Wang, J.-R. Yang, C.-C. Chuo, J.-T. Hsu, Z.-C. Feng, and M. Shiojiri, Mater. Trans. 48, 894 (2007).
N. Sharma, P. Thomas, D. Tricker, and C. Humphreys, Appl. Phys. Lett. 77, 1274 (2000).
J. Bruckbauer, P.R. Edwards, T. Wang, and R.W. Martin, Appl. Phys. Lett. 98, 141908 (2011).
X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 72, 692 (1998).
T. Tao, T. Zhi, B. Liu, Y. Li, Z. Zhuang, Z. Xie, D. Chen, P. Chen, R. Zhang, and Y. Zheng, Phys. Status Solidi (a) 211, 2823 (2014).
J. Abell and T.D. Moustakas, Appl. Phys. Lett. 92, 091901 (2008).
X.M. Wu, J.L. Liu, Z.J. Quan, C.B. Xiong, C.D. Zheng, J.L. Zhang, Q.H. Mao, and F.Y. Jiang, Appl. Phys. Lett. 104, 221101 (2014).
M.-H. Doan and J. Lee, Adv. Condens. Matter Phys. 2014, 1 (2014).
U. Jahn, O. Brandt, E. Luna, X. Sun, H. Wang, D.S. Jiang, L.F. Bian, and H. Yang, Phys. Rev. B 81, 125314 (2010).
R. Paessler, Phys. Status Solidi (b) 216, 975 (1999).
Acknowledgements
This research was supported by the Nano Material Technology Development Program (Green Nano Technology Development Program) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning (2011-0019984).
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Sheen, MH., Kim, SD., Lee, JH. et al. V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells. J. Electron. Mater. 44, 4134–4138 (2015). https://doi.org/10.1007/s11664-015-3994-z
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DOI: https://doi.org/10.1007/s11664-015-3994-z