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Highly insulating phase of Bi2O2Se thin films with high electronic performance

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Abstract

Bi2O2Se is highly competitive as a candidate of next-generation high-performance semiconductors. Though dubbed as semiconductor, Bi2O2Se films exhibited high conductance, i.e., metallic behavior, due to spontaneously ionized defects. Semiconducting/insulating films are of practical importance in broad applications based on low-power, high-performance electronics, the existence of which lacks firm evidence. Here, we synthesized highly insulating films in a controlled way, which exhibit semiconducting behavior with channel resistance up to 1 TΩ. The electron chemical potential lies within the band gap, in some cases, even below the charge neutrality level, signifying the trace of hole-type semiconducting. The performance of insulating devices remains high, comparable to high-quality devices previously. Especially, the threshold voltage (Vth) is positive, contrary to common negative values reported. Calculations indicate that our synthesis conditions suppress electron donors (Se vacancies (VSe)) and promote the formation of compensating acceptors (Bi vacancies (VBi)), leading to insulating behaviors. Our work offers insights into electron dynamics of Bi2O2Se, moves one step further towards p-type transistors and provides a valuable playground for engineering ferroelectricity in high-performance semiconductors.

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Acknowledgements

This research was supported by the National Natural Science Foundation of China (Nos. 11904294 and 62004172) and the foundation of Westlake Multidisciplinary Research Initiative Center (MRIC, Nos. MRIC20200402 and 20200101). We thank the support provided by C. Z., P. S., and Z. C. from Instrumentation and Service Center for Physical Sciences (ISCPS) and for Molecular Sciences (ISCMS) at Westlake University. We thank Westlake Center for Micro/Nano Fabrication for the facility support. Z. Z. and W. L. thank Chenmin Dai for helpful discussions.

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  1. Tao Wang, Zhuokai Xu, and Ziye Zhu contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Fudan University, Shanghai, 200433, China

    Tao Wang & Wanghua Hu

  2. Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China

    Tao Wang, Zhuokai Xu, Zhefeng Lou, Jialu Wang, Wanghua Hu, Xiaohui Yang & Xiao Lin

  3. Key Laboratory of 3D Micro/nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China

    Ziye Zhu, Mengqi Wu, Xiaorui Zheng & Wenbin Li

  4. Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China

    Tulai Sun

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  1. Tao Wang
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Wang, T., Xu, Z., Zhu, Z. et al. Highly insulating phase of Bi2O2Se thin films with high electronic performance. Nano Res. 16, 3224–3230 (2023). https://doi.org/10.1007/s12274-022-5046-3

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