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Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs

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Abstract

This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The performance booster dielectric pocket (DP) reduces the OFF-state power dissipation with minor variation in ON-current. Various dielectric materials on gate oxide have been checked to uplift from this slight variation in ON-current, and the device’s performance has been evaluated. The immunization towards short-channel effects (SCEs) and variation in analog/RF performance has been investigated with the various gate dielectric materials. Performance has also been investigated in terms of the device’s speed with the different gate dielectric materials. It has been done using a SILVACO Atlas TCAD simulator with a three-dimensional (3D) device simulation.

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Authors and Affiliations

  1. Department of Electronics Engineering, Rajasthan Technical University, Kota, 324010, India

    Vaibhav Purwar & Rajeev Gupta

  2. Department of Electronics and Communication Engineering, Dr. A P J Abdul Kalam Technical University, Lucknow, Uttar Pradesh, 226031, India

    Himanshi Awasthi

  3. Department of Physics, L.N.D. College Motihari (B.R.A. Bihar University), Muzaffarpur, Bihar, 845401, India

    Sarvesh Dubey

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  1. Vaibhav Purwar
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  2. Rajeev Gupta
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  3. Himanshi Awasthi
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  4. Sarvesh Dubey
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All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data; have been involved in drafting the manuscript or revising it critically for important intellectual content; and have given final approval of the version to be published. Each author has participated sufficiently in the work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.

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Correspondence to Himanshi Awasthi.

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Purwar, V., Gupta, R., Awasthi, H. et al. Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs. Silicon 14, 9361–9366 (2022). https://doi.org/10.1007/s12633-021-01624-0

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