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Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

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Abstract

In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface-states (Nss), we have been used capacitance/conductance-voltage (C/G-V) measurements of the performed Al/PCBM/NiO:ZnO/p-Si structures over wide-range of frequency and voltage. For this reason, various-ratio (2, 10, and 20%) NiO doped ZnO layer were coated on the Si(p-type) wafer as an interlayer. The values of complex dielectric-constant/loss (ɛ'/ɛ"), loss tangent (tanδ), ac electrical-conductivity (σac), real/imaginary-components of complex electric modulus (M’, M”) were calculated from the C/G-V measurements as function of frequency between 0.5-2.5V by 100 mV steps. All parameters were found distinctly-function of frequency/voltage owing to the existence of Nss, surface/dipole-polarizations and interlayer particularly at low and intermediate frequencies. The observed the higher value of dielectric constant (=2.5 for 2%(NiO) and 4.25 for 10 % (NiO)) even at 10 kHz show that (PCBM/NiO:ZnO) thin film can be successfully used instead of conventional low-dielectric SiO2. The value of σac increase with increasing doping rate of NiO. Thus, the used high-dielectric organic thin film between metal and semiconductor can be also an advantageous for applications in place of conventional metal/oxide/semiconductor (MOS) structures.

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Acknowledgments

This work is supported by Amasya University Scientific Research Project with FMB-BAP 18-0319 project number and Gazi University Scientific Research Project with BAP.05/2019-26 project number.

Availability of Data and Materials

The data that support the findings of this study are available from the corresponding author upon reasonable request.

Funding

This work is supported by Amasya University Scientific Research Project with FMB-BAP 18-0319 project number and Gazi University Scientific Research Project with BAP.05/2019-26 project number.

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Authors and Affiliations

  1. Sabuncuoğlu Şerefeddin Vocational School of Health Services, Amasya University, Amasya, Turkey

    S. Demirezen

  2. Vocational School of Health Services, Gazi University, Ankara, Turkey

    H. G. Çetinkaya

  3. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey

    Ş. Altındal

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  1. S. Demirezen
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  2. H. G. Çetinkaya
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This project involved a number of techniques and data analysis to evaluate the Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range. And I agree to publish this manuscript in Journal of Silicon.

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Demirezen, S., Çetinkaya, H.G. & Altındal, Ş. Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range. Silicon 14, 8517–8527 (2022). https://doi.org/10.1007/s12633-021-01640-0

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