Abstract
Increasing global demand for energy is inevitable. As energy dependence increases, more stable and efficient forms of energy are needed. Solar energy is the only viable renewable energy source that can meet this growing global demand. But low conversion efficiency is the major challenge for the solar cell devices. Therefore, to achieve better efficiency, CuO is introduced first time as a tunnel oxide passivated layer in this research work. Incorporation of CuO as a tunnel oxide layer between the substrate and base is the unique feature of this proposed work. The CuO tunnel oxide layer acts as an interface passivation layer and restrict the recombination of electrons and holes near the back contact. As a result, the recombination at the contact reduces which ultimately increases the minority charge carrier’s lifetimes in the solar cell, and hence enhances the open circuit voltage (Voc) from 0.71 to 0.76 V and the efficiency from 21.98 to 23.84% of the solar cell.
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References
Romer U, Peibst R, Ohrdes T, Lim B, Krugener J, Bugiel E, Wietler T, Brendel R (2014) Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/monocrystalline Si junctions. Sol Energy Mater Sol Cells 131:85–91
Yan D, Cuevas A, Bullock J, Wan Y, Samundsett C (2015) Phosphorus-diffused polysilicon contacts for solar cells. Sol Energy Mater Sol Cells 142:75–82
Rohatgi A, Zimbardi F, Rounsaville B, Benick J, Stradins P, Norman A, Lee B, Upadhyaya A, Ok YW, Tao Y, Tam A (2017) Overcoming the fundamental bottlenecks to a new world-record silicon solar cell. Final Technical Report (No. DOE-GT-6336),” Georgia Inst. of Technology, Atlanta, GA (United States)
Green MA, Dunlop ED, Hohl-Ebinger J, Yoshita M, Kopidakis N, Ho-Baillie AW (2020) “Solar cell efficiency tables (Version 55). Prog Photovoltaics Res Appl 28:3–15
Younis IM (2019) Cost benefit analysis of photovoltaic technology adoption at rest and service area for malaysia highway. Doctoral dissertation, Universiti Teknologi Malaysia
Lauinger T, Schmidt J, Aberle AG, Hezel R (1996) Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivation. Appl Phys Lett 68:1232–1234
Grant NE, Markevich VP, Mullins J, Peaker AR, Rougieux F, Macdonald D, Murphy JD (2016) Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon. Physica status solidi (a) 213:2844–2849
Peibst R, Romer U, Larionova Y, Rienäcker M, Merkle A, Folchert N, Reiter S, Turcu M, Min B, Krugener J, Tetzlaff D, Bugiel E, Wietler T, Brendel R (2016) Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story? Sol Energy Mater Sol Cells 158:60–67
Imran H, Abdolkader TM, Butt NZ (2016) Carrier-Selective NiO/Si and TiO2/Si contacts for silicon heterojunction solar cells. IEEE Trans Electron Devices 63(9):3584–3590
Rohatgi A, Rounsaville B, Ok YW, Tam AM, Zimbardi F, Upadhyaya AD, Tao Y, Madani K, Richter A, Benick J, Hermle M (2017) Fabrication and modeling of high-efficiency front junction n-type silicon solar cells with tunnel oxide passivating back contact. IEEE J Photovoltaics 7(5):1236–1243
Borden P, Xu L, McDougall B, Chang CP, Pysch D, Voisin P, Glunz SW (2008) Polysilicon Tunnel Junctions as Alternatives to Diffused Junctions, in: Proceedings of the 23rd EU-PVSEC, pp. 1149–1152
Yan D (2016) Heavily doped carrier-selective regions for silicon solar cells (PhD thesis). The Australian National University, Canberra
Kerr MJ, Schmidt J, Cuevas A, Bultman JH (2001) Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. J Appl Phys 89:3821–3826
Verma M, Mishra GP (2021) Effect of 1-D silver grated electrode on wafer-based TOPCon c-Si solar cell. Silicon 14:3439–3448
Verma M, Mishra GP (2020) An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology. Appl Phys A Mater Sci Process 126:661
Ravindra P, Mukherjee R, Avasthi S (2017) Hole-selective electron-blocking copper oxide contact for silicon solar cells. IEEE J Photovoltaics 7:1278–1283
Wanninayake AP, Gunashekar S, Li S, Church BC, Abu-Zahra N (2015) Performance enhancement of polymer solar cells using copper oxide nanoparticles. Semicond Sci Technol 30, pp. 064004–1–7
Yoo D, Lee D, Park J, Ahn J, Kim SH, Lee D (2019) Porosity control of nanoporous CuO by polymer confinement effect. Scripta Mater 162:58–62
Miao X, Wang S, Sun W, Zhu Y, Du C, Ma R, Wang C (2019) Room-temperature electrochemical deposition of ultrathin CuOx film as hole transport layer for perovskite solar cells. Scripta Mater 165:134–139
Siddiqui H, Qureshi MS, Haque FZ (2016) Valuation of copper oxide (CuO) nanoflakes for its suitability as an absorbing material in solar cells fabrication. Optik 127:3713–3717
Sahoo GS, Mishra GP (2018) Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency. Int J Modern Physics B 32:1850014–1–15
Silvaco ATLAS User manual.
Sahoo GS, Routray S, Pradhan KP, Mishra GP (2021) Electrical, optical, and reliability analysis of QD-embedded kesterite solar cell. IEEE Trans Electron Devices 68:5518–5524
Sahoo GS, Mishra GP (2019) Use of InGaAs/GaSb quantum ratchet in pin GaAs solar cell for voltage preservation and higher conversion efficiency. IEEE Trans Electron Devices 66:153–159
Sahoo GS, Mishra GP (2020) Design and modelling of InGaP/GaSb tandem cell with embedded 1-D GaAs quantum superlattice. IET Circuits Devices Syst 14:471–476
Sahoo GS, Mishra GP (2021) Use of hetero intrinsic layer in GaAs P-I-N solar cell to improve the intermediate band performance. Mater Sci Eng B 263:114862–1–11
Knapp E et al (2012) The role of shallow traps in dynamic characterization of organic semiconductor devices. J Appl Phys 112:024519
Roy A, Majumdar A (2022) Optimization of CuO/CdTe/CdS/TiO2 solar cell efficiency: A numerical simulation modeling. Optik 251:168456
Li L, Du G, Zhou X, Lin Y, Jiang Y, Gao X, Lu L, Li G, Zhang W, Feng Q, Wang J (2021) Interfacial engineering of Cu2O passivating contact for efficient crystalline silicon solar cells with an Al2O3 passivation layer. ACS Appl Mater & Interfaces 13(24): 28415–28423
Xinbo Y et al (2016) High-performance TiO2-based electron-selective contacts for crystalline silicon solar cells. Adv Mater 28:5891–5897
Zhang Z et al (2018) Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells. Sol Energy Mater Sol Cells 187:113–122
Sangho K et al (2018) Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer. Sci Rep 8:1–10
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Dr. Girija Shankar Sahoo conceived and designed the simulation and written the manuscript; Chalumuri Harini, Nagireddy Mahadevi, Parasa Sri Nethra performed the simulation study and generated the output; Dr. Girija Shankar Sahoo, and Dr. Ashis Tripathy modified the manuscript and analyzed the data; Dr. Manish Verma and Dr. Guru Prasad Mishra contributed by providing the Silvaco tool; all authors reviewed the entire manuscript.
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Sahoo, G.S., Harini, C., Mahadevi, N. et al. CuO Film as a Recombination Blocking Layer: a Unique Approach for the Efficiency Improvement of Si Solar Cells. Silicon 15, 4039–4048 (2023). https://doi.org/10.1007/s12633-023-02331-8
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DOI: https://doi.org/10.1007/s12633-023-02331-8