Correction to: Electronic Materials Letters https://doi.org/10.1007/s13391-022-00386-0

In the original publication of the article the following references were missing and the missed references are given in this correction

Cho, J.-H., Boampong, A.A., Kim, M.-H.: Selective etching of dielectric buffer layer for organic ferroelectric memory cell. Electron. Mater. Lett. 17, 406–413 (2021)

Zhang, X., Yang, C., Zhang, Y., Hu, A., Li, M., Gao, L., Ling, H., Hang, T.: Sub-surface damage of ultra-thin monocrystalline silicon wafer induced by dry polishing. Electron. Mater. Lett. 16, 355–362 (2020)

Kim, T.M., Sim, H.S., Jeon, J.W.: Development of a vaporizer for gradual vaporization control of precursor materials in the CVD process. Electron. Mater. Lett. 17, 250–259 (2021)

Byun, D.-W., Lee, Y.-J., Oh, J.-M., Schweitz, M.A., Koo, S.-M.: Morphological and electrical properties of β-Ga2O3/4H-SiC heterojunction diodes. Electron. Mater. Lett. 17, 479–484 (2021)

The original article has been corrected.