Abstract
This paper investigates the effect of using the adaptive body bias technique to minimize the negative consequences of the process variability and reliability issues in CMOS RF circuits. In recent years, ongoing downsizing in transistors’ aspect ratio led to process variation error and reliability concerns that, particularly for transistors, are threshold voltage increase and electron mobility drift. The studied optimization approach is based on combining the main low noise amplifier (LNA) circuit with an adaptive body bias circuit, and both are designed for ISM band 902–928 MHz. This technique is applied to a low-power, low-voltage, variable-gain, low noise amplifier to adjust the major effects of process variation, namely threshold voltage increment and electron mobility decrement. The amount of normalized variations in noise figure, small-signal gain (S21), and minimum noise figure parameters of the circuit are examined over a wide range of voltage gain. The post-layout simulation results in the 180 nm CMOS process show that with employing this technique and under 16% threshold voltage and mobility variation, NF is decreased by a factor close to 4.87 times and 2.27 times compared to the LNA with constant DC body bias, respectively. These results show the superior performance of the proposed approach. In addition to normalized results, the Monte− Carlo simulation results are also provided to ensure the effectiveness of the proposed circuit in the corners. In order to validate the circuit performance, mathematical calculations are provided, as well.
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References
M. Fakhfakh, H. Hsieh, L.H. Lu, Performance optimization techniques in analog. Mixed-Signal, Radio-Frequency Circuit Des. 5, 7 (2014)
C. Xin, “Radio frequency circuits for wireless receiver front-ends.” Texas A&M University, 2005.
J.-S.S. Yuan, S. Member, H. Tang, CMOS RF circuit design for reliability and variability (Springer, 2016)
S. S. Sapatnekar, “What happens when circuits grow old: Aging issues in CMOS design,” in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, pp. 1–2.
D. Ho and S. Mirabbasi, “Low-voltage low-power low-noise amplifier for wireless sensor networks,” in 2006 Canadian Conference on Electrical and Computer Engineering, 2006, pp. 1494–1497
M. Zgaren, A. Moradi, L.F. Tanguay, M. Sawan, ISM-band 902- to 928-MHz FSK transceiver with scalable performance for medical devices. Int. J. Circuit Theory Appl. 46(12), 2266–2282 (2018)
M. Zgaren, M. Sawan, “A low-power dual-injection-locked RF receiver with FSK-to-OOK conversion for biomedical implants”,. IEEE Trans. Circuits Syst. I Regul. Pap. 62(11), 2748–2758 (2015)
A. Liscidini, M. Brandolini, D. Sanzogni, and R. Castello, “A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier,” in Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005., 2005, pp. 406–409.
C.-J. Jeong, Y. Sun, S.-K. Han, S.-G. Lee, “A 2.2 mW, 40 dB automatic gain controllable low noise amplifier for FM receiver”, IEEE Trans. Circuits Syst. I Regul. Pap 62, 600–606 (2014)
C.L. Ampli, H. Rashtian, S. Mirabbasi, “Applications of body biasing in multistage CMOS low-noise amplifiers”,. IEEE Trans. Circuits Syst. I Regul. Pap. 61(6), 1638–1647 (2014)
B. Razavi, M. Parvizi, K. Allidina, and M. N. El-gamal, “An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback,” vol. 39, no. 9, pp. 1843–1853, 2004.
M. Parvizi, K. Allidina, M.N. El-Gamal, An Ultra-Low-Power Wideband Inductorless CMOS LNA with Tunable Active Shunt-Feedback. IEEE Trans. Microw. Theory Tech. 64(6), 1843–1853 (2016)
M. Sun et al., 3–10 GHz ultra-wideband LNA with continuously variable gain for wireless communication. Microw. Opt. Technol. Lett. 58(7), 1697–1699 (2016)
B. Razavi, “RF Microelectronics Second Edition,” 2011 Pearson Educ. Inc., 2012.
J.S. Yuan, H. Tang, S. Member, H. Tang, CMOS RF Design for Reliability Using Adaptive Gate-Source Biasing. IEEE Trans. Electron Devices 55(9), 2348–2353 (2008)
L. Fuxing et al., Study on high power microwave nonlinear effects and degradation characteristics of C-band low noise amplifier. Microelectron. Reliab. 128, 114427 (2022)
S.M. Pazos, F.L. Aguirre, F. Palumbo, F. Silveira, Hot-carrier-injection resilient RF power amplifier using adaptive bias. Microelectron. Reliab. 114, 113912 (2020)
V. Narendra, siva Antoniadis, dimitri De, “impact of using adaptive body bias to compensate die-to-die Vt variation on within-die Vt variation.” IEEE, 1999.
Y. Liu, J. Yuan, S. Member, CMOS RF power amplifier variability and reliability resilient biasing design and analysis. IEEE Trans. Electron Devices 58(2), 540–546 (2010)
Y. Liu, J.-S. Yuan, S. Member, CMOS RF low-noise amplifier design for variability and reliability. IEEE Trans. Device Mater. Reliab. 11(3), 450–457 (2011)
C.L. Amplifiers, S. Naseh, M.J. Deen, C. Chen, Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers. IEEE Trans. Device Mater. Reliab. 5(3), 501–508 (2005)
S. Ighilahriz et al., “Reliability study under DC stress on mmW LNA, Mixer and VCO,” in 2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p. CR-4.
J. González, J. Cruz, D. Vázquez, and A. Rueda, “Analysis of process variations’ impact on a 2.4 GHz 90 nm CMOS LNA,” in 2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS), 2013, pp. 1–4.
C. Hsieh, S. Wang, C. Yeh, and W. Lin, “Reliability evaluation and redesign methodology for RFCMOS transceiver frontend circuits in sub‐6‐GHz band of fifth‐generation new radio communication based on the reliability model,” Int. J. Circuit Theory Appl., 2021.
A. Khoshgoftar, T. Azadmousavi, H. Faraji Baghtash, and E. Najafi Aghdam, “Robust Low-Voltage LNA Design to Overcome Reliability and Variability Issues,” in 1St Iranian Conference on Microelectronics, 2019, no. December, pp. 1–6.
M. Rahman, R. Harjani, A 2.4-GHz, Sub-1-V, 2.8-dB NF, 475-$\mu $ W dual-path noise and nonlinearity cancelling LNA for ultra-low-power radios. IEEE J. Solid-State Circuits 53(5), 1423–1430 (2018)
R. van de Plassche and W. Huijsing, JohanPlassche, Rudy J. van de,Sansen, “Low-noise and RF power amplifiers for telecommunication,” in Analog circuit design: volt electronics; mixed-mode systems; low-noise and RF power amplifiers for telecommunication, 1999, p. 301.
H. Rashtian, “On the use of body biasing to improve the performance of CMOS RF front-end building blocks,” A THESIS Submitt. Partial FULFILLMENT Requir. DEGREE Dr. Philos. Fac. Grad. Stud., no. July, 2013.
M. B. Yelten, “Design of a tunable LNA and its variability analysis through surrogate modeling,” no. February, pp. 1–11, 2020.
M. Varonen et al., “Cryogenic W-band SiGe BiCMOS low-noise amplifier,” in 2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, pp. 185–188.
Z. Chen et al., “A 29–37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1–4.1 dB NF,” in 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, pp. 288–291.
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Khoshgoftar, A., Faraji Baghtash, H., Najafi Aghdam, E. et al. Design of a Low-Voltage LNA with Considering Reliability and Variability Issues. J. Inst. Eng. India Ser. B 104, 115–128 (2023). https://doi.org/10.1007/s40031-022-00839-y
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DOI: https://doi.org/10.1007/s40031-022-00839-y