Elsevier

Microelectronics Journal

Volume 26, Issue 6, September 1995, Pages 507-514
Microelectronics Journal

Refereed paper Research paper
Modelling of silicon epitaxy using silicon tetrachloride as the source

https://doi.org/10.1016/0026-2692(95)00012-7Get rights and content

Abstract

A growth-rate model, based on chemical kinetics for vapour phase epitaxy (VPE) of silicon by decomposition of SiCl4 in a horizontal rectangular reactor at atmospheric pressure, has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters, such as temperature, flow rate, mole fraction, position, etc. The results of simulation under appropriate conditions have been found to be in very good agreement with the experimental data available in the literature. Using these data, it has been possible to determine the values of the various rate constants involved in this model.

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