Refereed paper Research paperModelling of silicon epitaxy using silicon tetrachloride as the source
References (20)
- et al.
Growth and etching of silicon in chemical vapour deposition system; The influence of thermal diffusion and temperature gradient
J. Crystal Growth
(1975) - et al.
Modelling of epitaxial growth rate of silicon by vapour phase epitaxy
Microelectronics J.
(1990) Vapour phase deposition and etching of silicon
J. Electrochem. Soc.
(1965)The kinetics of epitaxial silicon deposition by the hydrogen reduction of chlorosilanes
Int. J. Electronics
(1966)- et al.
Phenomenological model of the CVD epitaxial reactor
J. Electrochem. Soc.
(1982) - et al.
Gas phase reactions and transport in silicon epitaxy
J. Electrochem. Soc.
(1983) - et al.
High temperature reactions in the silicon-hydrogen-chlorine system
J. Electrochem. Soc.
(1974) Autodoping effects in silicon epitaxy
J. Electrochem. Soc.
(1980)- et al.
Autodoping phenomena in epitaxy silicon
J. Electrochem. Soc.
(1983) Autodoping in silicon epitaxy
J. Electrochem. Soc.
(1985)
There are more references available in the full text version of this article.
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