Temperature dependence of the energy gap in semiconductors
Abstract
A relation for the variation of the energy gap (Eg) with temperature (T) in semiconductors is proposed. Eg ≐ E0 - αT2/(T+β) where α and β are constants. The equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
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