An investigation of steady-state velocity overshoot in silicon

doi:10.1016/0038-1101(85)90100-5

Solid-State Electronics

Volume 28, Issue 4, April 1985, Pages 407-416

https://doi.org/10.1016/0038-1101(85)90100-5 Get rights and content

Abstract

Electron dynamics in silicon is investigated by means of improved momentum- and energy-balance equations including particle diffusion and heat flux. The resulting system of partial differential equations is numerically solved in a variety of field configurations including strong discontinuities, in order to enhance velocity overshoot effects. It is found that diffusion, usually neglected in previous studies, plays a major role, and considerably modifies the features of the velocity vs distance curve, leading to an increase of the carrier drift velocity in the low-field region, i.e. before experiencing the effect of the strong field. In addition, it is found that, in order to take full advantage of velocity overshoot effects in MOSFET's, a structure must be designed having the strongest possible field at the source-end of the channel, where carrier density is controlled by the gate.

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^†: Permanent Address: Department of Electronics, University of Bologna, 40136 Bologna, Italy.

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An investigation of steady-state velocity overshoot in silicon

Abstract

J. Phys. Chem. Solids

Solid-St. Electron

Solid-St. Electron.

Electron Dynamics in Short-Channel Field-Effect Transistors

IEEE Trans. Electron Devices

Transient and Steady-State Electron Transport Properties of GaAs and InP

J. of Appl. Phys.

Frequency Limits of GaAs and InP Field-Effect Transistors at 300 K and 77 K with Typical Active Layer Doping

IEEE Trans. Electron Devices

Influence of Nonuniform Field Distribution on Frequency Limits of GaAs Field-Effect Transistors

Electronics Letters

Determination of Transient Regime of Hot Carriers in Semiconductors Using the Relaxation Time Approximation

J. Appl. Phys.

Modeling of a Submicrometer Gate Field-Effect Transistor Including Effects of Nonstationary Electron Dynamics

J. Appl. Phys.

High-Frequency Conductivity, Carrier Waves, and Acoustic Amplification in Drifted Semiconductor Plasmas

Ericsson Technics

Transport Equations for Electrons in Two-Valley Semiconductors

IEEE Trans. Electron Devices

Two-Dimensional Particle Models in Semiconductor-Device Analysis

Electronics Letters