The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs
References (21)
- et al.
Solid-St. Electron.
(1985) - et al.
Solid-St. Electron.
(1985) Solid-St. Electron.
(1987)- et al.
IEEE Proc.
(1980) - et al.
IEEE Trans. Electron Devices
(1982) IEEE Trans. Electron Devices
(1985)- et al.
IEEE Trans. Electron Devices
(1985) - et al.
IEEE Trans. Electron Devices
(1981) Solid-St. Electron.
(1978)- et al.
Int. J. Electron.
(1986)
There are more references available in the full text version of this article.
Cited by (4)
A new equivalent MOSFET representation of a hemt to analytically model non-linear charge control for simulation of hemt devices and circuits
1997, IEEE Transactions on Electron DevicesRapid monitoring of the charging properties of ion-doped MOS structures
2000, Technical Physics Letters
Copyright © 1991 Published by Elsevier Ltd.