Derivation of the emitter-collector transit time of heterojunction bipolar transistors

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Abstract

Various expressions for the emitter-collector transit time of a heterojunction bipolar transistor (HBT) can be found in the literature. It is not obvious whether the product of the emitter contact resistance and the base-emitter capacitance should be included in the emitter-collector transit time expression. This paper theoretically demonstrates that the above product does not appear in the transit time expression. Additional physical insights observed from the derived transit time expression and comparison to a similar expression for homojunction bipolar transistors will be discussed.

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Presently with Central Research Laboratory, Texas Instruments.