Review paperStatus of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
References (256)
- et al.
Phys. B
(1993) - et al.
Solid St. Commun.
(1981) - et al.
Solid-St. Electron.
(1995) - et al.
J. Cryst. Growth
(1994) - et al.
J. Cryst. Growth
(1978) - et al.
J. Cryst. Growth
(1981) - et al.
J. Cryst. Growth
(1991) - et al.
J. Cryst. Growth
(1993) - et al.
J. Electron. Mater.
(1991) J. Cryst. Growth
(1994)
Mater. Sci. Engng B
(1995)
Appl. Phys. Lett.
(1994)
Nucl. Instrum. Meth. Phys. Res. B
(1995)
More electric aircraft initiative
IEEE Trans. Comput. Hybrids, Man. Tech. A
(1994)
IEEE Trans. Nucl. Sci.
(1988)
IEEE Trans. Nucl. Sci.
(1992)
J. Electron. Mater.
(1995)
J. Appl. Phys.
(1973)
Elect. World
(1907)
Sov. Phys. Solid St.
(1972)
J. Appl. Phys.
(1990)
NASA Tech. Briefs
(1995)
Appl. Phys. Lett.
(1986)
J. Appl. Phys.
(1994)
J. Appl. Phys.
(1977)
J. Appl. Phys.
(1977)
J. Appl. Phys.
(1964)
Appl. Phys. Lett.
(1995)
J. Appl. Phys.
(1987)
Phys. Rev. B
(1970)
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