Elsevier

Thin Solid Films

Volume 260, Issue 1, 1 May 1995, Pages 54-57
Thin Solid Films

Interface trapping states in MISIM structures, with ZnS:Mn

https://doi.org/10.1016/0040-6090(94)06467-9Get rights and content

Abstract

Optical charging spectroscopy and thermally stimulated depolarization measurements were performed on metal-insulator-semiconductor insulator-metal structures with a ZnS:Mn active layer. Two groups of trapping centres situated at every insulator-semiconductor interface were in evidence. Their depths were found to be centred at 0.55 eV and 0.875 eV respectively in the forbidden gap of a ZnS:Mn film. A partial thermal healing of these interface states was observed.

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