Section IV. Ion implantation, semiconductors, materials modification
The annealing behavior of ion-implanted single crystals of the type YBa2Cu3Ox

https://doi.org/10.1016/0168-583X(89)91057-4Get rights and content

Abstract

Recent measurements have shown that the structural disorder induced by the implantation of ions into high-Tc superconducting oxides of the type YBa2Cu3Ox can lead to significant decomposition of the implanted region during subsequent thermal processing. We have used Rutherford backscattering spectrometry and ion channeling to examine the effects of ion implantation and thermal annealing on the near-surface composition of these materials. Our results indicate that the decomposition of the implanted region of YBa2Cu3Ox single crystals is associated with Ba migration and occurs for ion doses above a definite threshold when thermal anneals are carried out at temperatures greater than 500 °C in a variety of atmospheres (O2, O2 + H2O, Ar). Importantly, we have also observed that the implanted crystals can be annealed in O2 at a temperature of 850 ° C with little decomposition of the implanted region occurring and that, under these conditions, the implantation-induced disorder is substantially removed.

References (14)

  • G.C. Clark et al.

    Nucl. Instr. and Meth.

    (1988)
  • A.E. White et al.
  • A.D. Marwick et al.
  • J.C. McCallum et al.

    Mater. Lett.

    (1988)
  • R.H. Koch et al.

    Appl. Phys. Lett.

    (1987)
  • G.J. Clark et al.

    Appl. Phys. Lett.

    (1987)
  • G.J. Clark et al.

    Appl. Phys. Lett.

    (1987)
There are more references available in the full text version of this article.

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Research sponsored by the Division of Materials Sciences, US Department of Energy under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.

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