GeV-heavy ion irradiation effects in thallium-based superconducting copper oxides

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Abstract

Tl-based superconducting copper oxides Tl2Ba2CaCu2O8, TlBa2Ca2Cu3O9 and Tl2Ba2Ca2Cu3O10 were irradiated at 140 K by 3.6 GeV Xe ions and the resistance measured in situ as a function of the fluence. The results confirm that electronic stopping of GeV heavy ions plays a major role in the defect creation mechanism. Critical current densities were obtained from magnetization measurements on samples irradiated by 5.8 GeV Xe ions at fluences up to 2x1012 cm-2 and magnetic field orientations parallel and normal to the heavy ions tracks. Large enhancements of flux pinning and Jc are observed, in particular at low fluences, without significant change of the Tc's.

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Experiment performed at the National Laboratory GANIL, Caen, France.

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