Chapter Five - Spin Pumping and Spin Currents in Magnetic Insulators
Section snippets
From Charge to Spin Currents
Charge and spin transport in electrical conductors are connected because of spin–orbit interaction (SOI) [1], [2], [5], [6], [7], [8]. In other words, in materials with finite spin–orbit coupling, a charge current will be accompanied by a spin current, and vice versa. In the literature, the term spin Hall effect (SHE) is now commonly used for the generation of a spin current from a charge current via spin–orbit coupling, while the expression inverse spin Hall effect (ISHE) refers to the
Spin Currents and Magnetization Damping
In this section, we address the effect of spin pumping on the magnetization dynamics in the ferromagnetic layer. In particular, we will focus on Gilbert damping in metallic and insulating ferromagnetic materials, since spin current transfer across the F/N interface in F/N heterostructures enhances this type of damping. The efficiency of this interlayer spin current transfer is thereby governed by the interfacial spin-mixing conductance. Accordingly, measurements of the magnetization damping in
Electrical Detection of Spin Currents Generated via Spin Pumping
In Section 2, we have seen that spin currents arising from resonant magnetization dynamics provide an additional damping channel for the magnetization in F/N heterostructures. This allows to infer the magnitude of the spin current, and to quantify the spin-mixing conductance g↑↓ from broadband FMR experiments (c.f. Table 5.1). A complimentary, second approach to quantify the spin currents in F/N hybrids exploits the ISHE in the normal metal layer. In this scheme, the net spin current is
Spin Currents and the Spin-Mixing Conductance Concept
Spin currents are not only important for spin pumping; rather, the generation and detection of spin currents are of key importance also for the spin Seebeck effect (SSE) [14], [15], [105], [106] and the SMR [73], [74], [75], [76], [77] in ferromagnetic insulator/normal metal hybrid systems. Each of these effects has been studied extensively in its own respect. However, spin pumping, SSE, and SMR are all governed by one and the same interface parameter: the spin-mixing conductance g↑↓. The
References (111)
J. Magn. Magn. Mater.
(1996)- et al.
J. Magn. Magn. Mater.
(2001) - et al.
J. Magn. Magn. Mater.
(2007) Concepts in Spin Electronics
(2006)Spin Physics in Semiconductors
(2008)The Physical Principles of Magnetism
(2001)- et al.
Spin Waves: Theory and Applications
(2009) - et al.
JETP Lett.
(1971) Phys. Rev. Lett.
(1999)Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
(2003)
Spintronics
Proc. Roy. Soc. Lond. A
Phys. Rev. B
Phys. Rev.
Phys. Rev.
Appl. Phys. Lett.
Nature
Nat. Mater.
Nat. Mater.
Phys. Rev. Lett.
Nature
Nat. Mater.
Phys. Rev. Lett.
Rev. Mod. Phys.
Phys. Rev. Lett.
Phys. Rev. Lett.
J. Appl. Phys.
Nat. Mater.
Phys. Rev. Lett.
Appl. Phys. Lett.
Ferromagnetic Resonance
Phys. Rev. B
Phys. Rev. Lett.
Phys. Rev. B
Phys. Rev. B
Phys. Rev. B
Ultrathin Magnetic Structures III
Phys. Rev. Lett.
Phys. Rev. Lett.
Appl. Phys. Lett.
Phys. Rev. Lett.
Phys. Rev. B
Phys. Rev. Lett.
Phys. Rev. B
Phys. Rev. B
Phys. Rev. B
Phys. Rev. Lett.
Rep. Progr. Phys.
Appl. Phys. Lett.
Phys. Rev. Lett.
Cited by (18)
Recent advances in development of magnetic garnet thin films for applications in spintronics and photonics
2021, Journal of Alloys and CompoundsCitation Excerpt :On the other hand, as aforementioned in the introduction, magnetic garnet thin films are leading candidates for the next generation magnetic memory and logic devices with extremely fast operation speed and low energy consumption, such as skyrmion race-track memory and SOT-MRAM. Note that there have already been a lot of good reviews on spin pumping [90,192,193] and SSE [194–196]. In this section, we will focus on the topics related to the exploiting the applications of magnetic garnet thin films in magnetic memory and logic devices.
Enhanced spin Hall conductivity in tungsten-copper alloys
2021, Journal of Magnetism and Magnetic MaterialsElectrical detection of magnetization dynamics via spin rectification effects
2016, Physics ReportsInvestigation of spin-orbit torque performance with W/Cu-multilayers as spin current source
2023, Journal of Applied Physics