Comptes Rendus
no. 8
Advanced mask manufacturing
[Fabrication de masques avancés]
Carlo Reita1
1 CEA/LETI, Minatec, 17, rue des Martyrs, 38054 Grenoble cedex 09, France
Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 896-909.

Dans cet article nous esquisserons rapidement la fabrication de masques avancés et certains aspects spécifiques seront discutés. Nous montrerons que la complexité croissante des circuits et la complexification des procédés de lithographie optique génèrent des problèmes majeurs sur tous les aspects de la fabrication et du contrôle de tels masques. Ces problèmes ont non seulement des impacts techniques mais aussi économiques qui seront aussi indiqués.

In this article the fabrication of advanced masks will be briefly outlined and some specific aspects will be discussed. It will be shown that the increasing design complexity and the complexification of the optical lithographic process generate major issues on all aspects of the fabrication and control of such masks. These issues have not only technical but also economical impacts that will also be outlined.

Publié le :
DOI : 10.1016/j.crhy.2006.10.006
Keywords: Mask, Mask writing, Phase shift mask, Mask inspection, Mask repair
Mot clés : Masque, Écriture de masque, Masque à décalage de phase, Inspection de masque, Réparation de masque
Carlo Reita 1

1 CEA/LETI, Minatec, 17, rue des Martyrs, 38054 Grenoble cedex 09, France 
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Carlo Reita. Advanced mask manufacturing. Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 896-909. doi : 10.1016/j.crhy.2006.10.006. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2006.10.006/

[1] B.G. Eynon; B. Wu Photomask Fabrication Technology, McGraw–Hill, New York, 2005

[2] SEMI standards SEMI-P1 to SEMI-P6 specify various mechanical and dimensional characteristics of masks. They are available via SEMI

[3] B. Kasprowicz; S. Bryan; R. Priestley Evaluation of new mask materials for improved lithography performance, Optical Microlithography XIV (Proc. SPIE), Volume 4346 (2001), pp. 4346-4383

[4] SEMI P39-1105 OASIS—Open Artwork System Interchange Standard

[5] E. Robert et al. Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node, Optical Microlithography XVIII (Proc. SPIE), Volume 5754 (2005), pp. 476-487

[6] C.J. Progler; A. Borna; D. Blaauw; P. Sixt Impact of lithography variability on statistical timing behaviour, Design and Process Integration for Microelectronic Manufacturing II (Proc. SPIE), Volume 5379 (2004), pp. 101-110

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