Irradiation induced effects on Ni3N/Si bilayer system

doi:10.1016/j.vacuum.2009.06.003

Vacuum

Volume 83, Issue 12, 11 August 2009, Pages 1448-1453

https://doi.org/10.1016/j.vacuum.2009.06.003 Get rights and content

Abstract

The irradiation effect in Ni₃N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10¹⁴ ions/cm² was investigated at room temperature. Grazing incidence X-ray diffraction determined the formation of Ni₂Si and Si₃N₄ phases at the interface. The roughness of the thin film was measured by atomic force microscopy. X-ray reflectivity was used to measure the thickness of thin films. X-ray photoelectron spectroscopy has provided the elemental binding energy of Ni₃N thin films. It was observed that after irradiation (Ni 2p_3/2) peak shifted towards a lower binding energy. Optical properties of nickel nitride films, which were deposited onto Si (100) by ion beam sputtering at vacuum 1.2 × 10⁻⁴ torr, were examined using Au ions. In-situ I–V measurements on Ni₃N/Si samples were also undertaken at room temperature which showed that there is an increase in current after irradiation.

Introduction

Irradiation of materials with ion beams can improve the optical, chemical and electrical properties [1], [2]. The ion beam technique, in various forms, has been applied to semiconductors, metals, ceramics, polymers and glasses in producing stable, metastable or even non-equilibrium phases. Ion beam mixing [3], [4], [5], [6], [7], [8], [9], [10] in elemental metal/metal and metal/semiconductor bilayers and multilayer systems has been investigated in order to understand the ion induced atom transport processes and the formation of intermetallic phases at the interface. The relative importance of various mixing mechanisms such as ballistic mixing, thermal spike mixing and radiation-enhanced diffusion, has been established. The transition between these various scenarios concerning the ion parameters (mass, energy and fluence) and thermodynamic properties and the temperature of the samples are being debated.

Several ion beams induced processing techniques such as ion implantation, ion beam mixing and ion beam assisted deposition have been developed which allow tailoring new materials or modifying the properties of thin films and near-surface bulk layers. A large number of studies on ion beam induced effects in metal/metal [11], [12] and metal/semiconductor bilayers have been carried out [13], [14], [15], [16]. These investigations include (i) production of stable and metastable alloys and silicides, (ii) improvements of the structural, optical and electrical properties. More recently, attention has shifted to ceramic materials such as carbides, nitrides and oxides to study the behavior of ceramics, ceramic/metal or ceramic/semiconductor bilayers under ion irradiation. For instance, metal nitrides are an important class of ceramic materials which are useful in high temperature and irradiation environments as protective coatings, electrical insulators and diffusion barriers.

Binary nitrides are an interesting set of compounds that display a wide range of properties such as thermal stability or electrical conductivity. Technologically important compounds are BN, AlN, Si₃N₄, WN, TiN and NbN, which have been well characterized. On the other hand, less known but potentially important are a number of covalent metal nitrides of limited thermal stability such as Sn₃N₄, Cu₃N and Ni₃N [17]. These nitrides decompose into elements, thus suggesting possible uses in metallization reactions, which could be of importance for the electronic industry. Sputtering at a low deposition rate and power density can generate crystalline nitrides of tin, copper and nickel.

The thermal decomposition of Ni₃N was studied by Juza et al. [18] who found a pronounced decomposition at 440 °C of a sample at 5 °C/min. In a different study, Bernier [19], through the use of X-ray diffraction and magnetic measurements, detected the presence of a Ni₄N phase (cubic phase) in the course of the thermal decomposition of Ni₃N (hexagonal phase). Chemical analysis of the cubic phase showed a deficiency of nitrogen.

Xenon irradiation effects on the Ni₃N/Si bilayers system were observed by Rissanen et al. [20], [21]. The dissociation and sputtering of Ni₃N followed by diffusion of nitrogen were related to the small binding energy of this compound. At higher ion fluences, the formation of Ni₂Si and Si₃N₄ phases was found at the interface.

The structure and magnetic properties of nickel nitride thin films were studied by Vempaire et al. [22]. The structural characterization was done by X-ray diffraction and magnetic characterization was performed using a SQUID susceptometer.

In the present work a more comprehensive study of Ni₃N/Si bilayers irradiated with Au ions was designed to combine analytical methods sensitive to surface roughness and phase formation. The motivation for us to investigate the Ni₃N/Si system was to study a rather light ceramic/semiconductor bilayers system under swift heavy ion irradiation. The Ni₃N/Si bilayers system has been characterized by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), UV–Vis spectroscopy and I–V characteristics.

Section snippets

Experimental work and discussion

The experimental processes are discussed in the following sections.

Conclusion

Nickel nitride films on silicon substrate are synthesized using ion beam sputtering of pure nickel in a mixture N₂/Ar discharge and different phases of Ni₃N films are obtained by the irradiation of Au ions. It is observed from the GIXRD results that some new phases are introduced after irradiation. XRR measurements describe that the thickness of the irradiated film slightly decreases as compared to the as-deposited sample. AFM results show the increase in roughness of the irradiated thin film

Acknowledgement

The authors are thankful to the accelerator group of IUAC, New Delhi for delivering the required ion beam. The work was supported by UGC-DAE-CSR for providing the facilities of characterization of samples and CSIR, New Delhi for financial assistance.

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Nickel nitride is an attractive material for a broad range of applications including catalysis. However preparations and especially those targeting nanoscale particles remain a major challenge. Herein, we report a wet-chemical approach to produce nickel/nickel nitride nanocomposites using deep eutectic solvents. A choline chloride/urea deep eutectic solvent was used as a reaction medium to form gels containing nickel acetate tetrahydrate. Heat treatment of the gel in inert atmosphere forms nanoparticles embedded within a nitrogen-doped carbon matrix. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to understand the decomposition profile of the precursors and to select pyrolysis temperatures located in regions of thermal stability. X-ray diffraction (XRD) confirmed the presence of metallic nickel, whereas X-ray photoelectron spectroscopy (XPS) suggested the existence of a nickel nitride surface layer. According to transmission electron microscopy (TEM) analysis these mixed phase, possibly core-shell type nanoparticles, have very defined facets. These materials represent a unique opportunity to tune catalytic properties of nickel-based catalysts through control of their composition, surface structure, and morphology; in addition to employing potential benefits of a nitrogen-doped carbon support.
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Closed-field unbalanced magnetron sputtering ion plating (CFUMSIP) is a versatile technique for the preparation of high-quality coatings due to the enhancement of plasma density during deposition. In this study, Cr–Ni–N hard coatings with different Ni contents (0–64 at.%) were deposited onto AISI M2 steel substrates by CFUMSIP in Ar–N₂ reactive gas mixtures. The coatings were characterized in terms of their structure and properties by a variety of techniques, such as X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), micro-indentation, reciprocating wear tester, etc. The surface free energy of the coatings was calculated using the Owens–Wendt geometric mean approach. The experimental results indicated that the microstructure and properties of Cr–Ni–N coatings changed with the incorporation of Ni content at different level. The resultant Cr–Ni–N coatings were consisted of Cr₂N, CrN and metallic Ni mixed phases. With the appropriate addition of Ni in the range of 20–40 at.%, the fracture toughness and wear resistance could be improved as compared to the Cr–N binary coating, and the hardness remained relatively high (20–23 GPa). Additionally, both low total surface energy (18–22 mN/m) and low polar component of surface energy (0.1–0.2 mN/m) could be obtained in the Cr–Ni–N coating system. Therefore, the Ni incorporation can provide an effective route to tailor the structure and properties of the Cr–Ni–N coatings. The good combined properties of the Cr–Ni–N coatings demonstrate their potential for applications in plastic injection molding.

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Irradiation induced effects on Ni3N/Si bilayer system

Abstract

Introduction

Section snippets

Experimental work and discussion

Conclusion

Acknowledgement

Nucl Instrum Methods Phys Res B

Mater Sci Rep

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Nucl Instrum Methods Phys Res B

Appl Surf Sci

Vacuum

J Appl Phys

Phys Rev B

Irradiation induced effects on Ni₃N/Si bilayer system