ReviewInfrared detectors: status and trends
Introduction
Looking back over the past 1000 years we notice that infrared (IR) radiation itself was unknown until 202 years ago when Herschel's experiment with thermometer was first reported. He built a crude monochromator that used a thermometer as a detector so that he could measure the distribution of energy in sunlight. In April 1800 he wrote: [1]
“Thermometer No. 1 rose 7 degrees in 10 minutes by an exposure to the full red coloured rays. I drew back the stand....... thermometer No. 1 rose, in 16 minutes, 8 3/8 degrees when its centre was 1/2 inch out of the visible rays.”
The early history of IR was reviewed about 40 years ago in two well-known monographs [2], [3]. The most important steps in development of IR detectors are the following:
- •
in 1921 Seebeck discovered the thermoelectric effect and soon thereafter demonstrated the first thermocouple,
- •
in 1829 Nobili constructed the first thermopile by connecting a number of thermocouples in series [4].
- •
in 1833 Melloni modified design of thermocouple and used bismuth and antimony for it design [5].
Langley's bolometer appeared in 1880 [6]. Langley used two thin ribbons of platinum foil, connected so as to form two arms of a Wheatstone bridge. Langley continued to develop his bolometer for the next 20 years (400 times more sensitive than his first efforts). His latest bolometer could detect the heat from a cow at a distance of quarter of mile. Thus, at the beginning the development of IR detectors was connected with thermal detectors.
The photon detectors were developed in XX century. The first IR photoconductor was developed by Case in 1917 [7]. In 1933, Kutzscher at the University of Berlin, discovered that lead sulphide (from natural galena found in Sardinia) was photoconductive and had response to about 3 μm [8].
Many materials have been investigated in the IR field. Observing a history of the development of the IR detector technology, a simple theorem, after Norton [9], can be stated: All physical phenomena in the range of about 0.1–1 eV can be proposed for IR detectors. Among these effects are: thermoelectric power (thermocouples), change in electrical conductivity (bolometers), gas expansion (Golay cell), pyroelectricity (pyroelectric detectors), photon drag, Josephson effect (Josephson junctions, SQUIDs), internal emission (PtSi Schottky barriers), fundamental absorption (intrinsic photodetectors), impurity absorption (extrinsic photodetectors), low dimensional solids [superlattice (SL) and quantum well (QW) detectors], different type of phase transitions, etc.
Fig. 1 gives approximate dates of significant development efforts for the materials mentioned. The years during World War II saw the origins of modern IR detector technology. Photon IR technology combined with semiconductor material science, photolithography technology developed for integrated circuits, and the impetus of Cold War military preparedness have propelled extraordinary advances in IR capabilities in just a fraction of the last century [10].
Section snippets
Historical aspects of modern infrared technology
During the 1950s IR detectors were built using single-element-cooled lead salt detectors, primarily for anti-air-missile seekers. Usually lead salt detectors were polycrystalline and were produced by vacuum evaporation and chemical deposition from a solution, followed by a post-growth sensitisation process [8]. The first extrinsic photoconductive detectors were reported in the early 1950s. Since the techniques for controlled impurity introduction became available for germanium at an earlier
Classification of infrared detectors
Spectral detectivity curves for a number of commercially available IR detectors are shown in Fig. 2. Interest has centred mainly on the wavelengths of the two atmospheric windows 3–5 μm [middle wavelength IR (MWIR)] and 8–14 μm (LWIR region) (atmospheric transmission is the highest in these bands and the emissivity maximum of the objects at T≈300 K is at the wavelength λ≈10 μm), though in recent years there has been increasing interest in longer wavelengths stimulated by space applications.
Progress
General theory of photon detectors
The photodetector is a slab of homogeneous semiconductor with the actual “electrical” area, Ae, that is coupled to a beam of infrared radiation by its optical area, Ao (Fig. 3). Usually, the optical and electrical areas of the device are the same or close. The use of optical concentrators can increase the Ao/Ae ratio.
The current responsivity of the photodetector is determined by the quantum efficiency, η, and by the photoelectric gain, g. The quantum efficiency value describes how well the
General theory of thermal detectors
Thermal detectors operate on a simple principle, that when heated by incoming IR radiation their temperature increases and the temperature changes are measured by any temperature-dependent mechanism, such as thermoelectric voltage, resistance, pyroelectric voltage. The simplest representation of the thermal detector is shown in Fig. 10. The detector is represented by the thermal capacitance Cth coupled via the thermal conductance Gth to a heat sink at the constant temperature T. In the absence
Comparison of fundamental limits of photon and thermal detectors
The temperature dependence of the fundamental limits of of photon and thermal detectors for different levels of background are shown in Fig. 11, Fig. 12.
It results from Fig. 11 that in LWIR spectral range, the performance of intrinsic IR detectors (HgCdTe photodiodes) is higher than for other types of photon detectors. HgCdTe photodiodes with background limited performance operate at temperature below ≈80 K. HgCdTe is characterized by high optical absorption coefficient and quantum efficiency
Focal plane arrays
There are many important military and civilian applications of IR FPAs, which are frequently called “dual technology applications.” Lately, one should point out the growing utilisation of IR technologies in the civilian sphere at the expense of new materials and technologies and also the noticeable price decrease in these high cost technologies. Demands to use these technologies are quickly growing due to their effective applications, e.g., in global monitoring of environmental pollution and
Photon detectors
The increased sensitivity, resolution in system complexity of FPAs offer significant advantages in military as well as civilian applications in thermal imaging, guidance, reconnaissance, surveillance, ranging and communication systems. From fundamental considerations HgCdTe is the most important semiconductor alloy system for IR detectors in the spectral range between 1 and 25 μm. HgCdTe detectors as the intrinsic photon detectors absorb the IR radiation across the fundamental energy gap and are
Thermal detectors
The use of thermal detectors for IR imaging has been the subject of research and development for many decades. Thermal detectors are not useful for high-speed scanning thermal imagers. Only pyroelectric vidicons have found more widespread use. These devices achieved their fundamental limits of performance by about 1970. However, the speed of thermal detectors is quite adequate for non-scanned imagers with 2-D detectors. Fig. 72 shows the dependence of NEDT on noise bandwith for typical
Conclusions
The intention of this paper has been to present state-of-the-art both photon and thermal detectors, with emphasis on the material properties, device structure, and their impact on FPA performance, especially in LWIR and VLWIR spectral regions.
At present, HgCdTe is widely used variable gap semiconductor and has a privilege position both in LWIR as well as VLWIR spectral ranges. Fig. 85 shows a plot of the thermal detectivity (300 K, 0° FOV) versus operating temperature for the most prominent
References (378)
The Infrared Pioneers—III. Samuel Pierpont Langley
Infrared Physics
(1963)- et al.
Preparation and properties of HgTe and mixed crystals of HgTe-CdTe
Journal of Physics and Chemistry of Solids
(1959) - et al.
Long wavelength photoeffects in mercury selenide, mercury telluride and mercury telluride-cadmium telluride
Infrared Physics
(1962) - et al.
Narrow gap semiconductors
- et al.
Intrinsic infrared detectors
Progress in Quantum Electronics
(1988) - et al.
The theory of thermal imaging, and its application to the absorption-edge image tube
Infrared Physics
(1961) Hybrid pyroelectric–ferroelectric bolometer arrays
- et al.
Ultimate performance of infrared photodetectors and figure of merit of detector material
Infrared Physics Technology
(1997) - et al.
New generation of infrared photodetectors
Sensors and Actuators A
(1998) Comparison of the performance of quantum well and conventional bulk infrared photodetectors
Infrared Physics Technology
(1997)
Heterostructure infrared photovoltaic detectors
Infared Phys. Technol.
Near room-temperature IR photodetectors
Infrared Physics
Current generation mechanisms in small band gap HgCdTe p–n junctions fabricated by ion implantation
Journal of Crystal Growth
Bandgap spin-orbit splitting resonance effects in Hg1−xCdxTe alloys
Journal of Crystal Growth
Experiments on the refrangibility of the invisible rays of the Sun
Philosophical Transaction on Royal Society of London
The Detection and Measurement of Infrared Radiation
Elements of Infrared Technology
Historical survey of the early development of the infrared spectral region
American Journal of Physics
The infrared pioneers—II. Macedonio Melloni
Infrared Physics
Notes on the change of resistance of certain substrates in light
Physics Reviews
Film-type infrared photoconductors
Proceedings of IRE
Infrared detectors in the next millennium
Proceedings of SPIE
Infrared Detectors
Charge-coupled semiconductor devices
Bell Syst. Tech. J.
Single-crystal lead-tin chalcogenides
A pneumatic infrared detector
Review of Scientific Instruments
Properties of thermistor infrared detectors
Journal of Optics Society of America
Thermal imaging by means of the evaporograph
Applied Optics
The pyroelectric vidicon—A review
Proceedings of SPIE
Monolithic silicon microbolometer arrays
Uncooled IR focal plane arrays
Opto-Electronics Review
Uncooled microbolometer infrared sensor arrays
Pyroelectric materials and devices
Uncooled Thermal Imaging. Arrays, Systems, and Applications
Concepts in Photoconductivity and Allied Problems
Quantum-well infrared photodetectors
Journal of Applied Physics
Radiative lifetime in semiconductors for infrared detection
Infrared Physics
Elements of Infrared Technology
The photon detection process
The Detection and Measurement of Infrared Radiation
Performance limitations of photon and thermal infrared detectors
Opto-Electronics Review
Infrared focal plane array technology
Proceedings of IEEE
Recent advances in staring hybrid focal plane arrayscomparison of HgCdTe, InGaAs, and GaAs/AlGaAs detector technologies
Proceedings of SPIE
Photovoltaic CdHgTe-silicon hybrid focal planes
Proceedings of SPIE
Status of infrared detectors
Proceedings of SPIE
2048×2048 HgCdTe focal plane arrays for astronomy applications
Proceedings of SPIE
Ultra-low noise infrared focal plane array status
Proceedings of SPIE
Cited by (1041)
Broadband characterization of the spectral responsivity of thermoelectrically-coupled nanoantennas
2024, Photonics and Nanostructures - Fundamentals and ApplicationsPhotovoltaic infrared-photodetector based on perovskite Fe-BaTiO<inf>3</inf> with further investigations for X-BTO (X = V, Cr, Mn, and Fe): A DFT study
2024, Materials Science and Engineering: BDroplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling
2024, Journal of Crystal GrowthTowards graphene-based asymmetric diodes: a density functional tight-binding study
2024, Nanoscale AdvancesMid-infrared assisted transport at the nano-junction between graphene and a doped-diamond scanning probe
2024, Photonics and Nanostructures - Fundamentals and Applications