Time-dependent magnetotransport in semiconductor nanostructures via the generalized master equation

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Abstract

Transport of electrons through two-dimensional semiconductor structures on the nanoscale in the presence of perpendicular magnetic field depends on the interplay of geometry of the system, the leads, and the magnetic length. We use a generalized master equation (GME) formalism to describe the transport through the system without resorting to the Markov approximation. Coupling to the leads results in elastic and inelastic processes in the system that are described to a high order by the integro-differential equation of the GME formalism. Geometrical details of systems and leads leave their fingerprints on the transport of electrons through them. The GME formalism can be used to describe both the initial transient regime immediately after the coupling of the leads to the system and the steady state achieved after a longer time.

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Acknowledgements

The authors acknowledge financial support from the Research and Instruments Funds of the Icelandic State, the Research Fund of the University of Iceland, the Icelandic Science and Technology Research Programme for Postgenomic Biomedicine, Nanoscience and Nanotechnology, the National Science Council of Taiwan under contract No. NSC97-2112-M-239-003-MY3, and the Reykjavik University Development Fund T09001.

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