Elsevier

Solid-State Electronics

Volume 186, December 2021, 108173
Solid-State Electronics

Performance and reliability in back-gated CVD-grown MoS2 devices

https://doi.org/10.1016/j.sse.2021.108173Get rights and content
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Highlights

  • MoS2 devices and transistors present attractive electrical properties to help in the progressive scaling of silicon technology.

  • A scalable fabrication method as chemical vapor deposition (CVD) is mandatory to ensure potential integration with other technologies.

  • Extended electrical characterization of fabricated devices is an important step to improve the performance of these devices.

  • Reliability characterization including capacitance-voltage, low-frequency signature and current hysteresis can shed light on the disturbing mechanisms in these 2D devices.

Abstract

In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.

Keywords

Transition metal dichalcogenide
Molybdenum disulfide
MoS2
Two-dimensional materials
More than Moore
Reliability
Low-frequency noise

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Carlos Marquez received the M.Sc. degree in telecommunication engineering, the M.S. degree in electrical engineering, and the Ph.D. degree in electronics from the University of Granada, Granada, Spain, in 2012, 2014, and 2017, respectively. Since 2013 he is with the Nanoelectronics Group in the Department of Electronics at University of Granada, Spain. His research interests include electrical characterization of semiconductor devices, MOSFET front-end-of the line (FEOL) reliability, one-transistor dynamic-random-access memory cells (1T-DRAM) and two dimensional (2D) materials. Dr. Carlos Marquez is author or co-author of 22 peer-reviewed indexed journal articles, 5 book chapters, 2 patents and 20 conference contributions (some invited).

He has been collaborating as post-doc with different groups through international funded projects, 20 months at Tyndall National Institute (Ireland) and 6 months at Polytechnical Madrid University (Spain). Since the end of 2020 he leads a Marie Curie Global postdoctoral fellowship (895322-TRAPS-2D) to advance in the fabrication and reliability of MoS2 and other 2D electronic devices. This project is carried out between National Chiao Tung University, in Taiwan and University of Granada, in Spain.