Performance and reliability in back-gated CVD-grown MoS2 devices
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Carlos Marquez received the M.Sc. degree in telecommunication engineering, the M.S. degree in electrical engineering, and the Ph.D. degree in electronics from the University of Granada, Granada, Spain, in 2012, 2014, and 2017, respectively. Since 2013 he is with the Nanoelectronics Group in the Department of Electronics at University of Granada, Spain. His research interests include electrical characterization of semiconductor devices, MOSFET front-end-of the line (FEOL) reliability, one-transistor dynamic-random-access memory cells (1T-DRAM) and two dimensional (2D) materials. Dr. Carlos Marquez is author or co-author of 22 peer-reviewed indexed journal articles, 5 book chapters, 2 patents and 20 conference contributions (some invited).
He has been collaborating as post-doc with different groups through international funded projects, 20 months at Tyndall National Institute (Ireland) and 6 months at Polytechnical Madrid University (Spain). Since the end of 2020 he leads a Marie Curie Global postdoctoral fellowship (895322-TRAPS-2D) to advance in the fabrication and reliability of MoS2 and other 2D electronic devices. This project is carried out between National Chiao Tung University, in Taiwan and University of Granada, in Spain.