Surface Science LettersInvestigation of the chemical state of ultrathin Hf–Al–O films during high temperature annealing
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Acknowledgements
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs.
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Interfacial thermal stability and band alignment of Al<inf>2</inf>O <inf>3</inf>/HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/Si gate stacks grown by atomic layer deposition
2014, Journal of Alloys and CompoundsCitation Excerpt :To investigate the effect of the annealing temperature on the conduction band offset of Al2O3/HfO2/Al2O3/Si gate stack, conduction band offset values as a function of annealing temperature for samples have been obtained. It was reported that annealing temperature not only changes the valence band offset of the film but also changes the conduction band offset of the film, that is because the electronic states would change due to the generation of phase separation, thus, change the band alignments of the film [6,32,33]. The conduction band offset can be obtained by simply subtracting the valence band offset and the energy gap of the Si substrate from the band gap of Al2O3/HfO2/Al2O3 film.
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