The study of the electric and magnetic properties of PbZr0.2Ti0.8O3–BiFeO3 multilayers
Introduction
The interest to study oxide multilayers and superlattices made from materials with different characteristics had increased very much in the last decade due to the fact that the super-structure may present new or enhanced properties, valuable for the design of the next generation of memory devices [1]. The presence of the interfaces can change the expected physical properties due to strain and charge effects [2]. Especially the combination of different ferroelectric, ferromagnetic and/or multiferroic materials is very attractive, being possible to obtain “artificial multiferroics” or ferroelectrics with intriguing properties (antiferroelectricity, enhanced dielectric constant, etc.) [3], [4], [5], [6]. One very interesting property of natural or “artificial” multiferroics is the presence of the magneto-electric effect, consisting in the ability to generate a voltage by applying a magnetic field, and vice-versa. In other words, it should be possible to control the ferroelectric polarization with a magnetic field and the magnetization with an electric field [3]. Another interesting phenomenon is the magnetocapacitive effect, offering the possibility to control the capacitance with a magnetic field [7]. Of increased interest are those materials and structures for which the capacitance can be controlled by both electric and magnetic fields. Such properties, which are very valuable for applications in the field of information storage or microwave telecommunications, can be offered by either a mixtures of ferroelectric and ferromagnetic materials [8], [9] or single composition multiferroic materials like for example BiFeO3 [10], [11].
“Artificial multiferroics” may be obtained also by combining ferroelectrics with single composition multiferroics. Among ferroelectrics, lead zirconate–titanate (Pb(Zr,Ti)O3, shortly PZT) offers a unique set of ferroelectric–electric properties, making it very useful for the electronic and optoelectronic industry [12], [13], [14]. As mentioned above, bismuth ferrite BiFeO3 (BFO) is a single composition multiferroic with useful applications in the emerging field of spintronics [3]. It has a high transition temperature for the ferroelectric phase (Curie temperature TC ~ 1100 K), as well as for the G-type antiferromagnetic phase (Neel temperature TN ~ 650 K) [15]. The theoretical calculations show that BFO should have high polarization value, possibly higher than 100 μC/cm2. Experimental results show that, indeed, the ferroelectric polarization in single crystal BFO is around 100 μC/cm2 [16]. This value is comparable with that reported for epitaxial, tetragonal Pb(Zr1 − xTix)O3 films [17].
The combination of the two materials in multilayer thin films offer the possibility to obtain structures with new and superior properties compared to the component materials. Several methods have been developed to prepare epitaxial and polycrystalline films of PZT or BFO type, such as pulsed laser deposition, chemical solution deposition and magnetron sputtering [18], [19], [20]. Among these methods, the sol–gel method [13], [21], [22], is very popular because it provides good reproducibility, low cost and uniform thickness.
The electric and magnetic properties of BiFeO3–PbZr0.2Ti0.8O3 multilayers were investigated in this paper, in relation with the number of interfaces. All the samples were deposited by sol–gel on Pt/TiO2/SiO2/Si wafers (Pt/Si). The effect of multiple interfaces on the ferroelectric and magnetic hysteresis is analyzed and explained in terms of increased disorder in the dipole or spin networks. On the other hand, interfaces induce an additive contribution to the measured capacitance, leading to an apparent increase of the dielectric constant.
Section snippets
Experimental methods
The synthesis of 0.5 M PZT sol with a Zr/Ti ratio of 20/80 starts from alcoxide precursors: lead acetate Pb(CH3COO)2·3H2O (Reactivul Bucuresti), zirconium n-propoxide Zr[O(CH2)2CH3]4 and titanium isopropoxide Ti[OCH(CH3)2]4 (Alfa) dissolved in solvent 2-methoxyethanol (Aldrich). The conditions for the deposition of the PZT film are presented in previous publications [23], [24]. The stock solution of 0.3 M BFO was prepared starting from bismuth nitrate [Bi(NO3)3·5H2O] (Fluka) and iron nitrate
Structure
The XRD diffraction patterns for the three multilayer structures are shown in Fig. 1, together with the pattern for a single composition BFO film. In all cases the diffraction peaks correspond to perovskite structures of BFO and PZT (the characteristic peaks of rhombohedral BFO and tetragonal PZT structures). The single BFO phase was indexed after JCPDS 01-086-1518. The presence of some parasitic phases can be observed in this case (e. g. Bi25FeO39, possible Fe2O3). In the case of multilayer
Conclusions
PZT-BFO-PZT multilayers have been prepared by sol–gel method on platinized silicon wafer. The properties of multilayers were studied function of number of interfaces and compared, when necessary, with the properties of single composition BFO films. The electric measurements had revealed and AFE-like behavior of multilayers, although the component materials are both FE. A monotonic increase of capacitance with the number of interfaces was observed, while the tunability is reduced by increasing
Acknowledgements
The work was financed through the PNCDI2 contracts No. 72 149-HETOX and No. 71 032-VALS (Romanian Ministry of Education and Research), and FP7 project IFOX (grant agreement no. 246102).
References (54)
- et al.
Ce-Wen Nan
J. Eur Ceram. Soc.
(2007) - et al.
Mater. Sci. Eng. B
(2004) - et al.
Thin Solid Films
(2007) - et al.
Nat. Mater.
(2008) - et al.
Annu. Rev. Mater. Res.
(2007) - et al.
Nature
(2006) - et al.
Nat. Mater.
(2007) - et al.
New J. Phys.
(2008) - et al.
Appl. Phys. Lett.
(2007) - et al.
Appl. Phys. Lett.
(2005)
Science
Thin Solid Films
Appl. Phys. Lett.
Appl. Surf. Sci.
Ferroelectric Memories
Thin Solid Films
Phys. Rev. B
Adv. Mater.
Appl. Phys. Lett.
J. Korean Phys. Soc.
Appl. Phys. Lett.
Appl. Phys.
Appl. Phys. Lett.
J. Optoel. Adv. Mat.
J. Optoel. Adv. Mat.
J. Appl. Phys.
Appl. Phys. Lett.
Cited by (18)
Complex exchange coupling mechanisms in SRO/BFO/Fe heterostructures
2019, Journal of Alloys and CompoundsMicrostructure and improved electrical properties of Ti-substituted BiFeO<inf>3</inf> thin films
2017, Materials Research BulletinCitation Excerpt :The formation of the oxygen vacancies induces impurity energy level in the band gap and enhances the free carrier density by hopping of electrons to these defect levels [8]. To overcome these problems significant efforts have been made, either by a substitution technique at A or B site into the perovskite crystal (ABO3) [6,8,10–14] or by fabricating ‘artificial multiferroic’ by combining two or more ferroelectric/multiferroic materials [15–22]. In artificial multiferroics, combination of two or more different ferroelectric/multiferroic materials often leads to stress generation [19] as well as unwanted auto-doping [21,22] which may not be desired in many applications.
Electrical properties of Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf>-BiFeO<inf>3</inf> multilayers on non-platinized silicon substrate
2015, Materials Science and Engineering: BCitation Excerpt :Wang et al. [12,13] extensively studied the effect of Ti, Tb, and La substitutional doping on the electric and magnetic properties of BFO thin films. High-quality multiferroics (low leakage current, enhanced dielectric constant, etc.) can also be obtained “artificially” by combining two or more ferroelectric/multiferroic materials [12–22]. The combination of PZT (PbZrTiO3) and BFO multilayer thin films is found to offer superior dielectric and ferroelectric properties [14,16–19].
Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO <inf>3</inf> thin films
2014, Applied Surface ScienceCitation Excerpt :Multiferroic BiFeO3 (BFO), have attracted attention because the films simultaneously exhibit ferroelectric and antiferromagnetic ordering at room temperature [1,2].
Charge defects-induced electrical properties in bismuth ferrite bilayered thin films
2013, Materials Research BulletinCitation Excerpt :Multiferroic materials consisting of a multilayer structure have received considerable attention because of their improved functional properties and some interesting phenomena [1–7]. Multilayered thin films differing in structures or/and compositions often show some novel electrical properties [1–7], such as an enhanced magnetism [3], an improved polarization [2–7], a high dielectric constant [3], and other new functional properties [1–7]. BiFeO3 (BFO) multiferroic materials with a rhombohedrally distorted perovskite structure have been recently given considerable attention because of its giant remanent polarization [8–10], a high Curie temperature [11–20], and the existence of ferroelectric and ferromagnetic properties at and above room temperature [11–25], showing some potential applications in the field of high density ferroelectric random access memories, spintronics, and sensors and actuators.
Ferroelectric Field Effect Transistors Based on PZT and IGZO
2019, IEEE Journal of the Electron Devices Society