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  • Cited by 945
  • R. A. Street, Xerox Palo Alto Research Center, Stanford University, California
Publisher:
Cambridge University Press
Online publication date:
March 2010
Print publication year:
1991
Online ISBN:
9780511525247

Book description

This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general.

Reviews

"...highly recommended to people entering the field professionally and to those who need an overview of the research so far." Andrew Holmes-Siedle, Nature

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