Abstract
Vanadium dioxide thin films have been deposited from vanadium alkoxides VO(OR)3. An amorphous film is formed that transforms into crystalline VO2 upon heating at 500°C under a reducing atmosphere. Optically transparent VO2 thin films are then obtained that exhibit both electrical and optical switching around 70°C. The switching temperature together with the shape of the hysteresis loop can be modified by doping VO2 films with foreign cations. Doped MxVO2 (M = W6+, Nb5+, Ti4+, Cr3+ or Al3+) thin films have been prepared under the same conditions by mixing the vanadium alkoxide and a metal salt in an alcoholic solution. The switching temperature decreases when the film is doped with high-valent cations (W6+) and increases with low-valent cations (Al3+, Cr3+). The transition temperature first decreases and then increases when TiIV is added to the VO2 film while the width of the hysteresis loop is significantly reduced.
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Béteille, F., Livage, J. Optical Switching in VO2 Thin Films. Journal of Sol-Gel Science and Technology 13, 915–921 (1998). https://doi.org/10.1023/A:1008679408509
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DOI: https://doi.org/10.1023/A:1008679408509